MT29F256G08CBCBBWP-10:B TR

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MT29F256G08CBCBBWP-10:B TR application field and working principle

MT29F256G08CBCBBWP-10:B TR is a Flash-Memory product integrated by Micron company. It has two operation modes: serial and parallel, which can provide high-quality performance. This product uses 3D-NAND technology and can work at 1.2V to 1.8V voltage range. This product can support read, write, and erase operations with low power consumption and wide temperature range.

Application fields

MT29F256G08CBCBBWP-10:B TR is mainly used in intelligent systems and smart products, such as AI deep learning, industrial control, medical equipment, surveillance, automotive and consumer electronics. Its flexibility, low power consumption, wide temperature range and excellent performance make it fit the needs of the above fields.

Working principle

MT29F256G08CBCBBWP-10:B TR mainly consists of an MT29F Flash memory array controller and a NAND Flash memory array. It uses a 2 level organization to ensure sufficient storage capacity and simplify the task of creating large capacity memories.

The memory array is organized in a specific memory cycle, which includes erasing, accessing and restoring. Erasing is used to clean up the non-volatile NAND Flash memory array and ensure the reliability of the data. Accessing is used to read and write the data stored in the Flash memory array. And then Restore is using repair techniques to ensure the integrity of data stored in the Flash memory array.

Conclusion

MT29F256G08CBCBBWP-10:B TR is a high-performance memory product with low power consumption. It is widely used in AI deep learning, industrial control, medical equipment, surveillance, automotive and consumer electronics. Furthermore, its 2 level organization ensures sufficient storage capacity and its inherent maintenance functions to ensure the integrity of data. It is a high-quality product with multiple advantages.

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