MT29F256G08CBHBBJ4-3RES:B TR Allicdata Electronics
Allicdata Part #:

MT29F256G08CBHBBJ4-3RES:BTR-ND

Manufacturer Part#:

MT29F256G08CBHBBJ4-3RES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256G PARALLEL 333MHZ
More Detail: FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 33...
DataSheet: MT29F256G08CBHBBJ4-3RES:B TR datasheetMT29F256G08CBHBBJ4-3RES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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The MT29F256G08CBHBBJ4-3RES:B TR is one of the most advanced types of memory on the market, offering users an unprecedented level of performance and reliability. With its 8-bit SDRAM interface, it is ideal for use in highly demanding applications such as audio processing, video editing, gaming, and so on. This application field can be divided into two main segments: gaming and other applications. In other applications, the MT29F256G08CBHBBJ4-3RES:B TR is often implemented to store large amounts of data in a high speed, low-power, high-reliability manner. Additionally, the memory module is often used to boost performance to meet the demands of heavy-duty applications and tasks.

The MT29F256G08CBHBBJ4-3RES:B TR incorporates many cutting-edge technologies, including DDR3-L SDRAM, Double Data Rate (DDR) Technology, and Multi Level Cell (MLC) NAND Flash Technology. The DDR3-L SDRAM is designed to be more power efficient than traditional DDR3, while the Double Data Rate Technology enables the memory module to process data at twice the speed of a standard DDR3. The MLC NAND Flash Technology is touted to be the future of NAND flash storage, as it has the capability to store much more data in a denser configuration, making it ideal for high-end applications such as video editing and gaming. All of these technologies combined ensure an optimal performance for the most demanding tasks.

The working principle behind the MT29F256G08CBHBBJ4-3RES:B TR is relatively simple. The memory module is composed of two parts: the memory controller, which is responsible for data handling, and the memory chips, which are used to store the data. The memory controller is responsible for connecting the memory chips to the system and managing their transactions. It also deals with errors and detects data corruption. The memory chips also contain ECC (Error Correction Code) technology, allowing them to detect and correct data corruption or errors that may occur during transfer or when performing read/write operations.

The MT29F256G08CBHBBJ4-3RES:B TR is extremely reliable, offering users exceptional speeds, high bandwidths, and improved power efficiency. It is well suited for applications that require high speeds, large volumes of data, and long-term reliability. It can be used for gaming applications as well as for applications in the other application fields, offering users improved performance and increased durability.

The specific data is subject to PDF, and the above content is for reference

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