MT29F256G08CMCABH2-10RZ:A TR Allicdata Electronics
Allicdata Part #:

MT29F256G08CMCABH2-10RZ:ATR-ND

Manufacturer Part#:

MT29F256G08CMCABH2-10RZ:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256G PARALLEL 100TBGA
More Detail: FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 10...
DataSheet: MT29F256G08CMCABH2-10RZ:A TR datasheetMT29F256G08CMCABH2-10RZ:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (12x18)
Base Part Number: MT29F256G08
Description

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Introduction of MT29F256G08CMCABH2-10RZ:A TR MemoryMT29F256G08CMCABH2-10RZ:A TR memory is a type of non-volatile memory chip that uses NAND flash memory technology and is widely used in consumer electronic products, such as portable communications, laptops and other products that require large amount of stored data in an ultra-small form factor.Application FieldMT29F256G08CMCABH2-10RZ:A TR is suitable for applications where a large capacity of data storage is needed and is particularly suitable for consumer products. It can be used in various consumer electronics such as portable communication, laptops and other products. Due to its small form factor, it is perfect for portable consumer devices. It is also suited for embedded applications, especially where up-to-date consumer electronics require frequent firmware updates.Working PrincipleMT29F256G08CMCABH2-10RZ:A TR utilizes a NAND flash technology that stores data by trapping electrons in its memory cells while electrodes control the flow of electrons between the control gates and the memory cells. The electrons are held in the memory cells until an electrical charge is applied to the control gate, which allows the electrons to flow through the gate and change the state of the memory cell. This memory cell can then be read or written by the controller.Characteristics of MT29F256G08CMCABH2-10RZ:A TRMT29F256G08CMCABH2-10RZ:A TR has many characteristics that make it an ideal choice for consumer electronics. It has a small form factor, allowing it to be used in devices that have limited space. In addition, it has a high-capacity data storage of up to 128GB which allows it to be used in products with a large number of data storing needs. The chip also has excellent reliability, as it can maintain data storage over 10 years even after several rewrite cycles. It is also fast, reducing access time and increasing system performance.Advantages of MT29F256G08CMCABH2-10RZ:A TR MemoryMT29F256G08CMCABH2-10RZ:A TR is a great choice for consumer electronic products due to its many advantages. Because it uses NAND flash technology, it is much cheaper than other types of memory and allows for the introduction of better and more affordable consumer electronics. Additionally, its small size and long lifetime makes it a perfect choice for electronic products. Finally, its impressive data storage capacity allows for the usage of higher number of applications and functions, making the device more convenient for consumers.Conclusion MT29F256G08CMCABH2-10RZ:A TR is a non-volatile memory chip that utilizes NAND flash technology and is perfect for consumer electronics. It has a small form factor, high capacity data storage and excellent reliability. Its affordability, portability and capacity make it a great choice for various consumer electronics and embedded applications.

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