MT29F256G08CMCBBH2-10:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	256Gb (32G x 8)
Clock Frequency:	100MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-TBGA
Supplier Device Package:	100-TBGA (12x18)
Base Part Number:	MT29F256G08

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Memory: MT29F256G08CMCBBH2-10:B TR Application Field and Working Principle

Memory is an important component of the electronic world, and understanding how different memory types work is absolutely necessary for anyone involved in the production, distribution, or maintenance of electronic equipment. The MT29F256G08CMCBBH2-10:B TR is a type of memory that is used in a variety of applications, and understanding its working principles is essential for anyone in the electronics industry.The MT29F256G08CMCBBH2-10:B TR is a type of non-volatile NAND-type flash memory. It offers a 256 gigabit capacity, with a 2-bit per cell layout. It\'s built with a 2.7V to 3.6V power supply and is programmed with a single cycle command. It\'s also available with a 1.8V to 3.6V voltage range for backward compatibility.This memory is typically used for applications such as mobile phones, cameras, and tablets, as well as for data storage applications such as digital TVs and digital video broadcast. The MT29F256G08CMCBBH2-10:B TR is also used in a variety of industrial applications such as automotive, aviation, industrial control, and medical electronics.In terms of operations, the MT29F256G08CMCBBH2-10:B TR uses a unique address architecture to reads, writes, and erases data. Reading data is a fairly straightforward operation, and typically involves fetching the required data and validating its contents while maintaining proper memory pagination. Writing data often involves mapping the data to the required pages before writing it to the intended address. Erasing data typically involves clearing the selected block of pages before writing the data.The MT29F256G08CMCBBH2-10:B TR also features a data protection feature with error correction code (ECC) support. This feature helps ensure data integrity and prevent soft errors that can sometimes occur during reading, writing, and erasing operations. The error corrections also bolster overall system performance as it can detect and correct errors that may occur during read and write operations.The MT29F256G08CMCBBH2-10:B TR is also designed for maximum reliability and endurance, and features a wide range of features such as write protection, bad block management, and block erase. It also has a built-in digital signature for validating authenticity, and advanced security and protection measures to help maintain data integrity.The combination of memory capacity, error-correction, data protection, and endurance makes the MT29F256G08CMCBBH2-10:B TR a popular choice for a wide range of applications. Its popularity also stems from its relatively low cost and efficient use of energy. It offers a cost-effective way to obtain a high level of reliability and endurance in a wide range of applications.Overall, the MT29F256G08CMCBBH2-10:B TR is a reliable, high-capacity memory solution with a wide range of potential applications. Its combination of reliability, memory capacity, data protection, and endurance make it an attractive option for almost all types of applications. Its low cost and efficient use of energy also help to make it popular.

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