MT29F2G01ABBGDWB-IT:G Allicdata Electronics
Allicdata Part #:

MT29F2G01ABBGDWB-IT:G-ND

Manufacturer Part#:

MT29F2G01ABBGDWB-IT:G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2G SPI UPDFN
More Detail: FLASH - NAND Memory IC 2Gb (2G x 1) SPI
DataSheet: MT29F2G01ABBGDWB-IT:G datasheetMT29F2G01ABBGDWB-IT:G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (2G x 1)
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The MT29F2G01ABBGDWB-IT:G is a type of memory which is used in various applications. This memory serves as a fast, reliable, and easily scalable storage solution for industries that take advantage of its enhanced flexibility and performance. Additionally, the MT29F2G01ABBGDWB-IT:G is designed to be very efficient, consuming relatively little power when compared to other types of memory. This memory is typically used in embedded systems, automotive systems, mobile devices, and other areas where reliable data storage is essential.

The MT29F2G01ABBGDWB-IT:G is a type of NAND Flash memory. NAND Flash memory is a non-volatile memory that can store data even when the power is shut off. It is typically used in applications where large amounts of data need to be written quickly and reliably. Furthermore, NAND Flash memory is known for its superior performance, reliability, and scalability.

When it comes to the MT29F2G01ABBGDWB-IT:G, its enhanced performance and reliability are achieved through the use of advanced technologies such as its Multi-Level Cell (MLC) architecture and its Peripheral Component Interconnect (PCI) bus interface. The MLC architecture allows the memory to store more data per cell, providing a denser storage solution. The PCI bus interface allows for fast and reliable memory access, enabling it to quickly read and write large amounts of data.

The working principle of the MT29F2G01ABBGDWB-IT:G is fairly straightforward. It uses electrical signals to read and write data cells, which are composed of various bits of information. The memory can be read and written to with an external signal, allowing for quick and easy data storage. Once the signal is sent, the memory will read and write the data cell, making sure that all the bits of information are consistent and stored correctly.

In terms of applications, the MT29F2G01ABBGDWB-IT:G is most commonly used in embedded systems and automotive applications. Its fast read and write speeds, reliability, and scalability make it a great choice for these types of applications. Moreover, its low power consumption and compact design make it perfect for use in mobile devices as well. Finally, it is a great choice for industrial applications, providing reliable and secure data storage and access.

In conclusion, the MT29F2G01ABBGDWB-IT:G is a type of NAND Flash memory that is ideal for a variety of applications. Its advanced technology and design allow for fast, reliable, and efficient data storage and access. It is most commonly used in embedded systems and automotive applications, but it is also suitable for industrial and mobile applications. As such, it is an ideal choice for applications that require a fast and reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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