MT29F2G08ABAEAH4:E TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT29F2G08ABAEAH4:E TR is a type of memory and belongs to the group of non-volatile memories, which are used to store applications and data without consuming power or suffering from frequent absences of power. This type of memory is widely used in embedded systems and mission-critical applications, where it is necessary to guarantee the retention of data. This memory is a two-level NOR Flash memory that offers high speed capability and endurance, which is ideal for system designs that require transfer rates up to twelve times faster than traditional asynchronous NOR Flash memories.

The MT29F2G08ABAEAH4:E TR is a four-way multiplexed, 16-Mb memory device, organized as one meg doors of 16 bits each. The memory is programmed or read from a single level cell, meaning that there are two bits stored in each cell. The maximum operating speed of the memory is 120MHz and the interface is compatible with the standard SPI, can also be called with I2C, SD and USART. The architecture of the memory allows for a simple interface and does not require external logic for transfer between memory and multiplexer.

The MT29F2G08ABAEAH4:E TR has the 1-Mb block erase cycle with block erase operations that can be initiated while the part is powered down. This part also has additional features such as security programming, program lockout, etc, to provide data protection in a robust package. The memory can be programmed over the entire 1-Mb range, but the erase time of the entire 1-Mb range can be prolonged. This memory is a smart solution due to the fact that it is affordable, has low power consumption, is programmable anderasable, and is relatively small in size.

The application field of the MT29F2G08ABAEAH4:E TR is in embedded applications. This type of memory is designed for applications such as in smart phones, tablets, cameras, portable gaming systems, automotive systems and GPS devices. This memory can also be used in industrial applications where an affordable, reliable memory device is required, such as in barcode scanners, serial communications devices, payment systems, industrial printers, etc. The main features and advantages of the memory are its small size, low power consumption, reliable operation, durability and affordability.

The working principle of the MT29F2G08ABAEAH4:E TR can be explained as follows. The memory device is programmed and/or erased by sending commands to the memory interface. The memory interface is a dedicated logic device that interprets the commands sent to the memory and interprets them into control and data signals to the non-volatile cells. The control signals affect the behavior of the memory; the data signals transfer data to and from the memory. This is done by either programming or erasing the cells, depending on the type of command provided. Upon receiving a program and/or erase command, the memory interface will select and erase the appropriate cells, or program any new data presented.

The MT29F2G08ABAEAH4:E TR is a reliable, high-speed memory device that is well-suited for use in embedded applications. Its high speed and low power consumption of the memory allows for its use in many applications, from consumer to industrial. Its robust architecture also provides it with endurance and security features that make it ideal for use in highly-sensitive applications. The memory device is available in a small form factor and has a reasonable cost, making it a very desirable and versatile solution for any embedded application.

The specific data is subject to PDF, and the above content is for reference