
Allicdata Part #: | MT29F2G08ABAEAWP-AT:ETR-ND |
Manufacturer Part#: |
MT29F2G08ABAEAWP-AT:E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2G PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In recent years, the development of technology has brought increasingly elaborate and advanced electronic products, and an important component of such products is the Memory. MT29F2G08ABAEAWP-AT:E TR is one type of memory that is widely used in devices like mobile phones and personal computers. This article will discuss the application fields and working principle of this type of memory.
MT29F2G08ABAEAWP-AT:E TR represents a kind of NAND flash memory, which is mainly used in mobile phones, but can also be applied to other types of electronics products. The main applications are storing and archiving critical data, digital sound recordings, images, audio and video applications, etc. Along with this, this type of memory also offers various other benefits such as faster data access, lower power consumption, and a much greater storage capacity than other types of memory. The simple and concise structure of this memory also means that it can be designed and assembled easily, making it an efficient and cost-effective option.
On top of its physical features, MT29F2G08ABAEAWP-AT:\E TR also offers an advanced level of performance when it comes to its working principle. This type of memory works on the same principle as other memories – namely, data is stored by altering the electrical resistance of the materials that the memory is made of. Essentially, this means that when a data is written on the memory, the electrical resistance of the materials is altered, causing the memory to store the data that was written. When the user requests the stored data, the memory will read the stored electrical resistance and display the corresponding data back to the user.
In addition to the above, this type of memory also makes use of certain technologies to improve its performance. For example, the chip contains a nonvolatile controller (NVC) which is responsible for the proper management of the data read, write, and erase operations. Additionally, it uses an advanced error correction code (ECC) to detect and correct any errors that occurred during the read and write operations, thus ensuring reliable and efficient data transfer. Furthermore, it also features an internal temperature sensor to ensure that the vital internal components don\'t suffer any thermal damage.
From the above, it is evident that the MT29F2G08ABAEAWP-AT:E TR offers incredible performance and is widely used in many consumer and industrial Grade applications. Its advanced features and technologies make it an ideal choice for engineers and designers looking for a reliable, efficient and cost-effective memory solution. With its high Level of performance and competitive pricing, there is no doubt that this type of memory will continue to be an important component in many electronic devices for years to come.
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