MT29F2G08ABAEAWP-ATX:E

Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (256M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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MT29F2G08ABAEAWP-ATX:E Application Field and Working Principle
Memory is an important component of computers. Different memories may have different memory types and performance. MT29F2G08ABAEAWP-ATX:E is one of the common memories developed and produced by Micron. It belongs to the Flash Dual Data Rate SDRAM (DDR SDRAM), and is mainly used in digital media and consumer products applications.MT29F2G08ABAEAWP-ATX:E is a two-chip, two-plane and two-die structure, and the individual chips are pseudo 256-Mbit DDR SDRAMs. Its maximum frequency reaches 550MHz, which can meet the single and dual channel SDRAM requirements. Its maximum operation voltage is 1.8V, random access time is 40ns, operation and storage temperature range is -25~95°C, and its operating life is more than 50000 hours.In addition, as a DDR SDRAM, MT29F2G08ABAEAWP-ATX:E also has many advantages. It uses 4 to 6 times the power of DRAM to run at the same speed, has better cache compatibility and extended CAS latency, and it also has data auto-precharge (auto-precharge) function. Therefore, it can provide high-speed, low-power operation and higher system performance.As for the design principle of MT29F2G08ABAEAWP-ATX:E, it has a two-plane structure, four internal banks, and two bits-per-cell (or two Flash cells). On the one hand, the two-plane structure can divide the cache line of the controller into two halves, thus improving the read and write operations efficiency. On the other hand, its internal 4 banks can increase the speed of data access and the number of data operations in a process. The two bits-per-cell design improves chip density without affecting the data rate and speed of the chip, making it more suitable for applications such as digital media and consumer products.In addition, MT29F2G08ABAEAWP-ATX:E also has a unique "chip status error correction" function. This function uses spare cycles to periodically check the data stored in the memory chip, if any errors occur, it will self-detect and self-correct the data errors, thus reducing product failure rates.MT29F2G08ABAEAWP-ATX:E is widely used in digital media and consumer products, such as digital cameras, digital receivers, portable media players and digital music players. In comparison, DRAMs are more suitable for use in servers and data centers, as they are more cost-effective than other technologies.In summary, MT29F2G08ABAEAWP-ATX:E is a kind of DDR SDRAM with excellent performance and durability suited for digital media and consumer products applications. It has two-plane structure and four internal banks to improve its read and write operations efficiency, and its two bits-per-cell design makes it more cost-effective. In addition, its chip status error correction function also helps to reduce product failure rates. Therefore, MT29F2G08ABAEAWP-ATX:E is becoming more and more popular in digital media and consumer products applications.

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