
Allicdata Part #: | MT29F2G08ABAFAH4-ITS:FTR-ND |
Manufacturer Part#: |
MT29F2G08ABAFAH4-ITS:F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 6... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
Base Part Number: | MT29F2G08 |
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Memory: MT29F2G08ABAFAH4-ITS:F TR application field and working principle
Memory is an important type of storage technology that is widely used in many applications. MT29F2G08ABAFAH4-ITS:F TR is a type of memory marketed by Micron Technology. It uses Toggle DDR NAND Flash technology to achieve fast data transmission performance.
Application Fields
MT29F2G08ABAFAH4-ITS:F TR is an ideal memory option for many embedded applications. This type of memory is mainly used in industrial automation, embedded systems, as well as consumer applications such as mobile phones and tablets. It is also used in digital signage, automotive applications, and home security applications. This type of memory has a higher density than regular NAND Flash memory and is ideal for applications that require high performance and reliability.
Working Principle
MT29F2G08ABAFAH4-ITS:F TR employs Toggle DDR NAND Flash technology to achieve fast data transmission performance. This technology enables the memory to achieve data transfer speeds up to 200 Mbps. The Toggle DDR interface combines the advantages of ONFI 2.1 and Toggle 1.0 technologies to achieve better random-write performance up to 50x faster than previous generations.
The NAND Flash technology used in this memory is also designed for increased data reliability and endurance. The NAND Flash cells are designed to operate with very low voltage, so there is less chance of cell corruption in extreme conditions. In addition, the memory is designed to have a uniform pages size, which helps to reduce page-level errors that can occur with different page sizes.
Advantages of Using MT29F2G08ABAFAH4-ITS:F TR Memory
MT29F2G08ABAFAH4-ITS:F TR memory offers several advantages over traditional memory technologies. Firstly, it has excellent data reliability, making it an ideal choice for mission-critical applications. The combination of NAND Flash and Toggle DDR technologies also ensures fast data transfer speeds, allowing for extremely fast read and write operations. Finally, the memory is designed to have a consistent page size to reduce the risk of errors that can occur when using different page sizes.
Conclusion
MT29F2G08ABAFAH4-ITS:F TR memory is an excellent choice for embedded applications that require high performance and reliability. It uses Toggle DDR NAND Flash technology for increased data transfer speeds and reliability and is designed with uniform page sizes for improved error reduction. This type of memory is well suited for use in mission-critical applications and provides an excellent balance of cost and performance.
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