MT29F2G08ABBFAH4:F Allicdata Electronics
Allicdata Part #:

MT29F2G08ABBFAH4:F-ND

Manufacturer Part#:

MT29F2G08ABBFAH4:F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel
DataSheet: MT29F2G08ABBFAH4:F datasheetMT29F2G08ABBFAH4:F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory refers to the ability to store information and use it in various tasks. A modern computer is composed of millions of integrated circuits of various types, each of which performs its part in the overall operation of the system. One of the most important types of memory is the MT29F2G08ABBFAH4:F flash memory. This article will discuss the application fields and working principle of the MT29F2G08ABBFAH4:F.

Applicationfields

The MT29F2G08ABBFAH4:F flash memory is widely used in many devices, such as digital cameras, MP3 players, digital camcorders, cellular phones and other hand-held devices. The memory can also be used in a wide range of embedded systems, providing a low-cost, low-power solution for embedded applications such as real-time control applications, embedded system logging and instrumentation, embedded system communications and data acquisition.

MT29F2G08ABBFAH4:F is also used in many computer-based devices such as personal computers, netbooks, PDAs and notebooks. The memory is ideal for devices that require high performance, low power and large storage capacity, such as smart phones, tablets and other handheld devices.

The MT29F2G08ABBFAH4:F flash memory is also used in many industrial systems and medical devices. It is often used as a storage medium in industrial automation systems, as well as medical image processing and medical diagnostics applications.

Working principle

The MT29F2G08ABBFAH4:F is a multi-function NAND Flash memory device. It is composed of two essential elements: the memory cells and the NAND Flash controller. The memory cells are composed of multiple cells that store the information. The NAND Flash controller is responsible for manipulating the cells in order to store, retrieve and erase data from them.

The MT29F2G08ABBFAH4:F memory operates on an advanced thermal-assisted NAND Flash architecture. This architecture allows for better performance and greater endurance than other NAND Flash designs. This is achieved by using an array of transistors to create multiple memory banks. These memory banks can store more data and can operate at higher temperatures than traditional memory. The MT29F2G08ABBFAH4:F also features advanced ECC (Error Correction Code) engine to correct any errors that may occur during read or write operations.

In addition to the advanced NAND Flash architecture, the MT29F2G08ABBFAH4:F also features a high speed interface. This interface allows for fast data transfer, allowing for faster boot times and quicker data retrieval. The MT29F2G08ABBFAH4:F also features multiple interrupt sources, allowing it to receive interrupts from other components, such as the host processor or other devices.

Conclusion

The MT29F2G08ABBFAH4:F is a high performance, low power, large capacity flash memory. It is widely used in many devices, from digital cameras and MP3 players to industrial systems and medical devices. It operates on an advanced thermal-assisted NAND Flash architecture, with multiple memory banks and a high-speed interface. The MT29F2G08ABBFAH4:F also features an advanced ECC engine and multiple interrupt sources. These features make it an ideal choice for a wide range of embedded and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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