MT29F2G16ABAEAWP-AAT:E Allicdata Electronics
Allicdata Part #:

MT29F2G16ABAEAWP-AAT:E-ND

Manufacturer Part#:

MT29F2G16ABAEAWP-AAT:E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2G PARALLEL TSOP
More Detail: FLASH - NAND Memory IC 2Gb (128M x 16) Parallel
DataSheet: MT29F2G16ABAEAWP-AAT:E datasheetMT29F2G16ABAEAWP-AAT:E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Introduction

MT29F2G16ABAEAWP-AAT:E is a type of semiconductor memory referred to as NAND Flash – a type of flash memory that is used in digital cameras and portable devices. NAND flash is a non-volatile memory that retains data even when the electrical power is interrupted. It is used in the storage of operating systems and other files on digital cameras, smartphones, and other portable electronic devices.

Application Field and Working Principle

MT29F2G16ABAEAWP-AAT:E is a high-performance NAND Flash memory specifically designed to meet the rigors of embedded applications. It has been designed as a drop-in replacement for standard SLC NAND Flash, offering up to twice the performance and greater reliability than those standard NAND Flash devices. MT29F2G16ABAEAWP-AAT:E is composed of alphanumeric memory cells arranged in an array of rows and columns. Each memory cell is capable of storing a single bit of information, either a ‘1’ or a ‘0’. This array of memory cells forms a NAND Flash memory device.The NAND Flash memory device works by writing data bits to the memory cells, which are stored until they are written over. When data needs to be read, it is read from the array and written back to the memory cells. The data is then stored until it is written over again.The main advantage of NAND Flash memory is its high density, which allows it to store large amounts of data in a small area. This makes it an ideal solution for applications that require a large amount of data storage. It is also highly reliable, as it is non-volatile, meaning that it does not require battery power to retain data.

Benefits

MT29F2G16ABAEAWP-AAT:E offers a number of benefits over standard SLC NAND Flash. It is capable of faster read and write speeds, allowing for faster applications when used in embedded applications. It also has increased reliability, due to its more advanced manufacturing process.Additionally, MT29F2G16ABAEAWP-AAT:E offers an increased endurance rating, which means that it can tolerate more read/writes before becoming unreliable. This makes it ideal for applications that require frequent updates, such as digital cameras.MT29F2G16ABAEAWP-AAT:E also provides improved power efficiency, making it a more energy-efficient option than standard NAND Flash memory devices. This reduces the electricity costs associated with operating devices, such as digital cameras, that use the device.

Conclusion

In conclusion, MT29F2G16ABAEAWP-AAT:E is a high-performance NAND Flash memory device. It is ideal for embedded applications due to its faster read and write speeds, increased reliability, and improved power efficiency. It is an ideal solution for applications such as digital cameras, smartphones, and other portable electronic devices that require large amounts of data storage.

The specific data is subject to PDF, and the above content is for reference

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