MT29F2G16ABBEAH4-AAT:E TR

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Memory is an essential device in the computing industry today. Memory devices are used in computers, smart phones, tablets and other digital devices to store information. The particular memory device that will be discussed herein is the Micron Technology MT29F2G16ABBEAH4-AAT:E TR device. This device is a non-volatile NAND flash memory device that provides reliable storage, fast access to stored information, and energy efficiency. This section will discuss the application fields and working principles of the Micron Technology MT29F2G16ABBEAH4-AAT:E TR device.

The MT29F2G16ABBEAH4-AAT:E TR device is a 3D-stacked NAND flash memory device manufactured by Micron Technology. It is based on Tier-1 15nm process technology and features a 4-plane, 2Gb (256Mb) memory array. The device has an overall capacity of 16Gb on an 11x11 mm die. It is a high performance NAND flash memory device, with a maximum operating frequency of 166 MHz and an I/O interface that supports 8-bit or 16-bit transfer rates up to 200MB/s. The MT29F2G16ABBEAH4-AAT:E TR device also has an advanced ECC and power management architecture that reduce power consumption by up to 40%.

MT29F2G16ABBEAH4-AAT:E TR is particularly well-suited for use in embedded applications because it is energy-efficient, fast, and reliable. The device is ideal for use in low-power applications such as digital cameras, gaming devices, and wearables. It can also be used in automotive applications and industrial devices, allowing them to quickly respond to data requests. The device is also suitable for use in video applications, such as set-top boxes, media players, and video recorders, due to its low power consumption and fast data transfer rates.

The working principle of the MT29F2G16ABBEAH4-AAT:E TR memory device is based on NAND flash technology. NAND flash technology is a type of non-volatile memory that utilizes an array of transistors that can be programmed to store binary data. By applying appropriate voltage to the gates of the NAND transistors, it is possible to store and retrieve data. The NAND transistors in the MT29F2G16ABBEAH4-AAT:E TR device are arranged into a 4-plane, 2Gb (256Mb) array that is divided into 16Gb of available storage. The 4-plane design enables the device to quickly access data by accessing data in multiple planes simultaneously.

The MT29F2G16ABBEAH4-AAT:E TR device also utilizes Error Correction Code (ECC) to ensure reliable data storage and retrieval. ECC is used to detect and correct errors that may occur during data transfer and storage. The MT29F2G16ABBEAH4-AAT:E TR device features an advanced ECC architecture that reduces power consumption and ensures reliable data storage. The device also features a power management architecture that reduces power consumption by up to 40%, making it ideal for low-power applications.

In conclusion, the Micron Technology MT29F2G16ABBEAH4-AAT:E TR device is a high performance 3D-stacked NAND flash memory device. It features a 4-plane, 2Gb (256Mb) array with an overall capacity of 16Gb. The device is ideal for use in embedded applications due its energy-efficiency, fast data transfer rates, and reliable data storage. The working principle of the device is based on NAND flash technology, which utilizes an array of transistors that can be programmed to store binary data. The device also features a power management architecture and advanced ECC architecture that reduce power consumption and ensure reliable data storage.

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