
MT29F2G16ABBEAH4:E TR Integrated Circuits (ICs) |
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Allicdata Part #: | 557-1545-2-ND |
Manufacturer Part#: |
MT29F2G16ABBEAH4:E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 2G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 2Gb (128M x 16) Parallel ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (128M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
Base Part Number: | MT29F2G16 |
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The MT29F2G16ABBEAH4:E TR is a memory device with a variety of features and applications. The memory device is a type of non-volatile memory, also known as NAND Flash memory. It is used in electronic devices such as digital cameras, digital audio players and smart phones. With the increasing popularity of these devices, the MT29F2G16ABBEAH4:E TR became a commonly used memory device.
The MT29F2G16ABBEAH4:E TR is an 8Gb multi-level cell NAND Flash memory. It has an 8-bit data interface, which allows for simple data transfer from and to the device. The device has a endurance of up to 10,000 program/erase cycles and an operating voltage range from 1V to 1.8V. It also has a high data transfer rate of up to 98Mb/s. These features make the MT29F2G16ABBEAH4:E TR ideal for high performance applications.
The MT29F2G16ABBEAH4:E TR device is used in a variety of applications. One of the most common applications is as a storage device for digital cameras. Digital cameras can store images, videos and audio on a type of Flash memory. The MT29F2G16ABBEAH4:E TR is an ideal choice for this purpose because it has a high storage capacity, fast data transfer rate and long endurance time. The device can also be used in digital audio players and smart phones. Its fast data transfer rate, long endurance time and low power consumption make it a great choice for these applications.
The working principle of the MT29F2G16ABBEAH4:E TR is relatively simple. The device is made up of two separate parts, the memory cell array and the control logic. The memory cell array is composed of NAND cells, which are the basic building blocks of Flash memory. Each cell can store a single bit of data. The control logic is responsible for controlling the flow of data within the device, including data transfer and operations such as erasing and programming.
The MT29F2G16ABBEAH4:E TR is a versatile and reliable memory device with a variety of uses. It has an 8Gb storage capacity and an 8-bit data interface, making it ideal for digital camera applications. Its fast data transfer rate, long endurance time and low power consumption make it a great choice for digital audio players and smart phones. The device\'s operating voltage range from 1V to 1.8V and its endurance of up to 10,000 program/erase cycles make it suitable for a wide range of applications.
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