MT29F2G16ABBFAH4:F

Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (128M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)

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Memories, both volatile and non-volatile, have become essential components in modern computing systems. From the smallest desktop computers to the largest supercomputers, memories are essential for efficient data storage and retrieval. In recent years, flash memory has become a common type of memory due to its unique features and increased density.The MT29F2G16ABBFAH4:F is a type of flash memory developed by Micron Technology. It is based on an innovative 3D Multi-Level Cell (MLC) architecture and is designed to meet the needs of the industrial, automotive, and mobile markets. This device is designed to reduce power consumption while increasing programming speed, erase speed, and write speed. The MT29F2G16ABBFAH4:F is a DDR256Mx16 device that is available in various packages ranging from 144 BGA to 256 BGA.The MT29F2G16ABBFAH4:F is designed to provide reliable non-volatile storage in applications such as automotive, industrial and mobile devices. The 3D MLC architecture eliminates the need for multiple memory channels, thereby reducing cost and improving performance. The device has a wide operating temperature range of -40°C to 95°C and feature DataJET technology for enhanced read and write performance.The MT29F2G16ABBFAH4:F is an ideal memory solution for applications that require a high-performance and low-power solution. The device features fast read and write speeds and performs data storage operations with minimal power consumption. The device can also be used as an embedded storage solution, as it is available in small packages with pin counts as low as 20.The working principle of the MT29F2G16ABBFAH4:F is similar to any other type of flash memory. It is based on floating-gate transistors, with each cell storing a single bit of information. These cells are connected to a charge pump circuit, which controls the movement of data between flash memory and chip. The memory can be programmed in blocks of varying sizes, and once programmed it can be read at high speeds using DataJET technology.Overall, the MT29F2G16ABBFAH4:F is an innovative and reliable memory solution for a wide range of applications. It combines power efficiency and fast read/write speeds in a single package, making it a cost-efficient memory solution for industrial, automotive, and mobile applications.

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