MT29F2T08CTCCBJ7-6R:C TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT29F2T08CTCCBJ7-6R:C TR is a type of memory that combines features such as high density, ultralow power consumption, high speed and advanced process technology. This makes it a perfect choice for today\'s next-generation devices, including mobile phones, tablets, smart home appliances, wearable devices and other fast-growing Internet of Things (IoT) products.

A major application field of MT29F2T08CTCCBJ7-6R:C TR is system memory. The memory is often built into devices to hold the code and data required to operate the system. It stores information used by the microprocessor and other system components that changes over time. Every time the device is powered on, the system memory contains the information that the processor needs to continue operating.

Because of its large storage capacity, a high-performance system memory feature is essential for current embedded systems and mobile device applications. Therefore, MT29F2T08CTCCBJ7-6R:C TR was developed to meet this need. This cutting-edge memory module offers 4 Gigabyte of capacity with 24-bit I/O access and a data transfer rate of up to 1.4 billion bytes per second.

In addition to system memory, MT29F2T08CTCCBJ7-6R:C TR is also ideal for use in embedded systems. The embedded system is a computer that is designed to do specific tasks such as controlling a car\'s clock, infotainment system or any other dedicated application. The memory module is designed to work seamlessly with embedded microprocessors and embedded operating systems, providing the reliable access and performance needed for the system to function properly.

MT29F2T08CTCCBJ7-6R:C TR is a type of non-volatile memory, which means it retains its information even when the power is turned off. This makes it highly reliable, since it can hold data for many years without any loss of information.

The memory works by using a Flash memory technology that stores data using a combination of a floating gate transistor and a trapping oxide layer. When a voltage is applied to the transistor, a hole is formed which traps electrons in the oxide layer. When the voltage is removed, the electrons remain trapped, and the memory is considered "written". To erase the memory, a voltage is applied to the transistor and the electrons are released.

The main advantage of the MT29F2T08CTCCBJ7-6R:C TR memory module is its combination of features that make it ideal for use in a variety of applications. It is low power, reliable, and offers high speed and capacity. In addition, it is compatible with a variety of embedded microprocessors, making it easy for system designers to incorporate this module in their products.

The specific data is subject to PDF, and the above content is for reference