MT29F2T08EMHAFJ4-3TES:A TR Allicdata Electronics
Allicdata Part #:

MT29F2T08EMHAFJ4-3TES:ATR-ND

Manufacturer Part#:

MT29F2T08EMHAFJ4-3TES:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2T PARALLEL 333MHZ
More Detail: FLASH - NAND Memory IC 2Tb (256G x 8) Parallel 333...
DataSheet: MT29F2T08EMHAFJ4-3TES:A TR datasheetMT29F2T08EMHAFJ4-3TES:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory is an important component of computer, and MT29F2T08EMHAFJ4-3TES is one of the core memories in the computer. This article will introduce the application field and working principle of MT29F2T08EMHAFJ4-3TES.

The MT29F2T08EMHAFJ4-3TES is a 2Gb NAND Flash Memory in a small package, fabricated using 65nm floating-gate process technology. The device has 32 planes, 4K pages per plane, a maximum of eight blocks per plane and an endurance of 3000 program/erase cycles. It also has a quick program time and a very low power consumption. Its small size makes it ideal for storage-constrained applications.

Because of its high performance, the MT29F2T08EMHAFJ4-3TES has a wide range of applications in different fields. It can be used for mobile phones, digital cameras, digital music players, etc. It is also suitable for embedded systems, automotive navigation systems, industrial control systems and other data processing systems. In addition, it is used for networking applications, such as routers and switches, as well as wireless solutions.

The MT29F2T08EMHAFJ4-3TES works by storing data in a very small cell array. This array is composed of two layers, a control gate and a floating gate. Every storage cell is connected to electrical charge and can make points to emphasize information. The data is generated by sending electrical signals through the device and then stored as quantum dots (small particles of charge) in the floating gate. This data is then processed and read out using the control gate.

The MT29F2T08EMHAFJ4-3TES is designed to be a reliable memory device with a long life span and low power consumption. It is also versatile, allowing it to be used for many applications. Its low maintenance requirements and small size also make it an attractive option.

In conclusion, the MT29F2T08EMHAFJ4-3TES is a high performance, reliable and versatile memory device that can be used in many different applications. It is small, low power and long lasting, making it ideal for embedded systems, automotive and industrial use. With its low cost and long life span, it is a good choice for those looking for an economical and reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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