
Allicdata Part #: | MT29F4G01ABAFD12-ITES:F-ND |
Manufacturer Part#: |
MT29F4G01ABAFD12-ITES:F |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4G SPI TBGA |
More Detail: | FLASH - NAND Memory IC 4Gb (4G x 1) SPI |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (4G x 1) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29F4G01ABAFD12-ITES:F is one of the most advanced memory components in today’s market. It has a wide range of applications in a variety of fields, ranging from consumer electronics to industry-level equipment. The new technology used by this memory component is able to provide better performance, reliability, and power efficiency compared to other memory components. Moreover, this design is cost-efficient, making it attractive to many companies and consumers.
The MT29F4G01ABAFD12-ITES:F memory component is based on NAND flash memory technology. This type of memory is a non-volatile memory that stores data even when the power is turned off. It is used in a variety of electronic devices, from mobile phones and cameras to computers and routers. The main advantages of this technology are that it is lightweight and power efficient, providing the user with a reliable way to store data. In addition, NAND flash memory can be used in high-speed storage, allowing users to access data quickly.
The MT29F4G01ABAFD12-ITES:F memory component has a number of features that make it an attractive choice for many applications. One of these features is the increased endurance of the memory cell, which is achieved by the use of a new type of Error Correction Code (ECC). This enhances the reliability of the memory, allowing it to maintain data integrity even under extreme temperatures and other operating conditions. In addition, the memory also provides a 128-bit wide bus that can be used to read and write data quickly and efficiently.
The memory also has an improved power management system, reducing power consumption and increasing the battery life of the device. It is also available in a range of sizes, from 2GB to 32GB, allowing it to meet the needs of various types of applications. Finally, the memory is able to support a variety of technologies, such as Multi-Level Cell (MLC) and Single-Level Cell (SLC), making it a versatile storage option.
The working principle of the MT29F4G01ABAFD12-ITES:F memory component is simple and straightforward. Data is written to and read from the memory using an address bus. The data can then be stored in special memory cells, which are adapted to the specific storage requirements of the device. Once the data is stored, the memory can be accessed by the device as needed. This process is repeated for each read and write cycle, which allows for a fast and efficient transfer of data.
The MT29F4G01ABAFD12-ITES:F memory component is an ideal choice for a wide range of applications, from consumer electronics to corporate equipment. Its features make it suitable for both high performance and budget-friendly applications. Additionally, its high endurance and low power consumption make it a reliable and cost efficient storage solution. With its variety of features and versatile design, the MT29F4G01ABAFD12-ITES:F memory component is sure to be a valuable asset to both businesses and consumers.
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