
Allicdata Part #: | MT29F4G01ABBFD12-AATES:FTR-ND |
Manufacturer Part#: |
MT29F4G01ABBFD12-AATES:F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4G SPI TBGA |
More Detail: | FLASH - NAND Memory IC 4Gb (4G x 1) SPI |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (4G x 1) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT29F4G01ABBFD12-AATES:F TR is a high performance memory device that is designed for use in a variety of applications. The device features a number of features that make it well suited to many tasks, including high speed data storage, low power consumption, and data security. The MT29F4G01ABBFD12-AATES:F TR is an ideal storage solution for digital data, such as images, video, music, and documents.The MT29F4G01ABBFD12-AATES:F TR is a 4 Gb NAND Flash memory device. It provides a 4KB page size and 64KB block size, which is suitable for both block and page level operations. The device has an advanced controller for data integrity, error correction, and wear leveling. The device also features a 3.3V supply voltage, which is ideal for use in low power systems.The MT29F4G01ABBFD12-AATES:F TR is a Flash memory device that utilizes a CMOS technology. It consists of a series of NAND gates, each of which consists of one source and one drain. The operation of the device is based on the principles of tunneling, which allow the electrons to move from one source to another. As the electrons move through the tunnel, they may either be captured by the drain or move back to their original source. This process is used to store and retrieve data in the device.The MT29F4G01ABBFD12-AATES:F TR can be used in a variety of applications, including consumer electronics, industrial automation, automotive, military, and medical applications. The device is also used in consumer digital audio and video devices, computer memory, and embedded systems. In consumer digital audio and video devices, the MT29F4G01ABBFD12-AATES:F TR is used to store digital media, such as music and video files. The device is well suited to storing large amounts of data, as it has a large memory capacity of 4 GB. It is also capable of high-speed data transfer rates, which is beneficial when streaming large files. In computer memory, the MT29F4G01ABBFD12-AATES:F TR is utilized in a variety of memory products. It is used to store data and programs in both volatile and non-volatile memory. It is commonly used in computer system memory, RAM, ROM, and hard disk drives. The device is also useful in storage applications. In embedded systems, the MT29F4G01ABBFD12-AATES:F TR can be used in a variety of devices, including microcontrollers, digital signal processors (DSPs), and microcomputers. The device is often used to store code and data for control applications. It is well suited for use as a Flash memory, as it can provide high data retention over a long period of time.The MT29F4G01ABBFD12-AATES:F TR is a high performance memory device that is designed for use in a variety of applications. Its features, such as a large memory capacity, low power consumption, and data security make it an ideal choice for digital data storage. Furthermore, its ability to store and transfer data quickly, makes it useful in a variety of applications, such as consumer electronics, industrial automation, automotive, military, and medical applications.
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