MT29F4G08ABBDAHC:D TR

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MT29F4G08ABBDAHC:D TR is a kind of NAND Flash Memory categorized under the general class of Non-Volatile Memory devices. It is a product of Micron Technology, Inc. and belongs to the family of 3-D Stacked NAND Flash Memory series. The product is packaged in a TSOP package, and is intended for applications involving consumer electronics and automotive.

MT29F4G08ABBDAHC:D TR, with its advanced 3-D stacking technology and advanced firmware algorithms, is designed to provide considerable speed increase, reduce power consumption, and improve data integrity. It features a write endurance of 1000 P/E cycles, an operating temperature range of -40 degree to 85 degree celcius, and supports page transfers of up to 4 KB per page.

The working principle of MT29F4G08ABBDAHC:D TR is similar to that of other NAND Flash Memory devices. It stores data in a grid of cells with each cell having its own access transistor. The cells can be programmed with a series of logic levels, which can be read back to memory. When data is written to the cells, the charge on the cell is set to a certain level, representing the logical level of the data. When the data is read from the cells, the charge is discharged through the access transistor and its value is interpreted accordingly. The cells are organized into blocks and pages for efficient access.

MT29F4G08ABBDAHC:D TR is a perfect companion for memories in embedded applications such as set-top boxes, digital cameras, gaming consoles and DVD players. It is an ideal choice for automotive applications, such as in-dash navigation and infotainment systems. Its wide operating temperature range makes it suitable for use in automotive as well as industrial applications. Finally, its exceptional speed, low power consumption and advanced error correction capabilities makes it a great fit for Consumer Electronics applications.

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