MT29F4G08ABBEAM70M3WC1 Allicdata Electronics
Allicdata Part #:

MT29F4G08ABBEAM70M3WC1-ND

Manufacturer Part#:

MT29F4G08ABBEAM70M3WC1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL WAFER
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel
DataSheet: MT29F4G08ABBEAM70M3WC1 datasheetMT29F4G08ABBEAM70M3WC1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F4G08ABBEAM70M3WC1 is a type of memory that is often used in a variety of applications. The memory is made up of 8 gigabits (Gb) of non-volatile NAND Flash memory, which is a type of computer memory that can be read and written over multiple times. This type of memory is a great choice for applications that require a reliable, high-speed memory solution.

The most common application of this type of memory is in digital cameras, camcorders, and other digital devices. In these applications, the memory is used to store photos, videos, and other data. It is also used in portable laptops, tablets, and other portable electronics to store data and files. The memory can also be used in servers, routers, and other types of computer equipment.

MT29F4G08ABBEAM70M3WC1 is an asynchronous NAND Flash memory that operates by constantly reading and writing data. It utilizes a 8-bit data bus, with an asynchronous data access protocol for transferring data. This memory is designed for high speed applications, so it can quickly transfer data between the memory and host device.

The memory operates by writing data to the data cells, which are located on the storage cells of the memory. Once data has been written, the data is stored in the cells until it is read. The data is then retrieved from the cells and sent to the device or computer. Once the data has been read, the cells are updated and the data is marked as read. This allows the memory to keep track of which data has been read and which data has not been read.

The memory also has an on-die ECC mechanism that provides error correction and data redundancy. This is especially useful in applications where reliability and accuracy are important, such as in cameras and other digital devices. The ECC mechanism helps to reduce data errors and improve the overall data integrity of the memory.

MT29F4G08ABBEAM70M3WC1 memory is usually available in package sizes from 8 gigabits (GB) up to 64GB. It also supports multiple process technologies, such as Toggle Mode, PCM and Multi-Level Cell. Additionally, it is very power efficient, consuming only 0.3 mA of power during active mode. This makes it ideal for applications where power usage is a major concern.

MT29F4G08ABBEAM70M3WC1 is an ideal choice for applications that require reliable memory solutions. It features fast data access, low power consumption, and data redundancy that makes it suitable for a variety of applications. This makes it a great choice for digital cameras, portable electronics, servers, computers, and other devices. Additionally, its low cost makes it an ideal choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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