MT29F4G16ABADAH4:D Allicdata Electronics
Allicdata Part #:

MT29F4G16ABADAH4:D-ND

Manufacturer Part#:

MT29F4G16ABADAH4:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ...
DataSheet: MT29F4G16ABADAH4:D datasheetMT29F4G16ABADAH4:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: MT29F4G16
Description

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Memory is an important part of any computing device, used to store information that is both local and distributed. One of the most popular memories used in today\'s computing environments is the MT29F4G16ABADAH4:D, a type of non-volatile Flash memory used in a variety of applications. In this article, we will explore the application field and working principle of the MT29F4G16ABADAH4:D memory.

Application Field of MT29F4G16ABADAH4:D Memory

The MT29F4G16ABADAH4:D is a non-volatile Flash memory developed by Micron Technology, one of the leading manufacturer of memory components for computing environments. The MT29F4G16ABADAH4:D is suitable for a wide range of applications, and can be used in devices such as embedded systems, cellular phones and digital cameras. It is also ideal for applications where high reliability, low power consumption and space efficiency are essential.

In addition to these applications, the MT29F4G16ABADAH4:D is also used as a cost-effective storage solution for embedded systems. It has been designed with an ultra-small footprint and a low pin count, making it an ideal choice for applications such as wearables or IoT devices that require minimal energy consumption and memory allocation. It is also an ideal memory solution for applications with limited physical space, such as personal audio players, smart cards and notebook computers.

Working Principle of MT29F4G16ABADAH4:D Memory

The MT29F4G16ABADAH4:D is a non-volatile Flash memory that operates as a cell, allowing data to be written and read from it in much the same way as a traditional hard disk drive. However, unlike a traditional hard disk drive, the MT29F4G16ABADAH4:D utilizes cells that are slightly smaller than the size of a standard hard disk drive. This allows the storage density of the MT29F4G16ABADAH4:D to be significantly higher than that of a traditional hard disk drive, making it an ideal memory solution for applications where storage space is at a premium.

The MT29F4G16ABADAH4:D utilizes a NAND Flash cell structure, in which data is transferred between cells using a combination of transistors and capacitors. When data needs to be written to or read from the cell, the circuit will charge or discharge the capacitor, resulting in a voltage that corresponds to the specific data value. This data can then be read from the cell, allowing it to be stored and retrieved at a later time.

As a non-volatile Flash memory, the MT29F4G16ABADAH4:D is designed to retain data even if the power is lost. This is because the data is stored on the memory chip itself, rather than in a volatile memory that is lost when the power is cut. This makes the MT29F4G16ABADAH4:D an ideal memory solution for applications that require high reliability, such as medical devices.

Conclusion

The MT29F4G16ABADAH4:D is a type of non-volatile Flash memory developed by Micron Technology for a variety of applications. It is used in a variety of devices, from embedded systems to cellular phones and digital cameras. It is an ideal memory solution for applications requiring high reliability, low power consumption and space efficiency. Its working principle relies on a NAND Flash cell structure, in which data is transferred between cells using a combination of transistors and capacitors. As a non-volatile memory, it is capable of retaining data even if the power is lost. With its versatility and high reliability, the MT29F4G16ABADAH4:D is an excellent choice for any application requiring a cost-effective memory solution.

The specific data is subject to PDF, and the above content is for reference

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