MT29F4G16ABADAWP-AIT:D Allicdata Electronics
Allicdata Part #:

MT29F4G16ABADAWP-AIT:D-ND

Manufacturer Part#:

MT29F4G16ABADAWP-AIT:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL TSOP
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel
DataSheet: MT29F4G16ABADAWP-AIT:D datasheetMT29F4G16ABADAWP-AIT:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Entering the era of information explosion, data storage device is widely used in our daily life. The memory device MT29F4G16ABADAWP-AIT:D plays an important role in various electronic devices including computers, smartphones and tablets. To meet the demand of reliable data security, it is widely applied in the area of memory including personal computers, government agencies and data centers.

MT29F4G16ABADAWP-AIT:D is a 4-gigabyte (GB) multi-level cell (MLC) NAND Flash memory device. It applies the advanced 3D NAND Flash memory technology, consisting of up to 64 stacked layers enabling it to provide higher densities within the same package. Compared with other traditional Digital Memories, the non-volatile SLC/MLC NAND Flash memory has many advantages, such as faster read and write speeds, a low power consumption, and a small form factor.

The working principle of MT29F4G16ABADAWP-AIT:D is based on the floating gate concept. In this type of memory, the electrons trapped in a thin layer called the floating gate are used to store the data as charge. This layer is isolated from the underlying semiconductor substrate by a tunneling oxide layer. When the electrical energy is applied to the memory, a certain charge can be injected into the floating gate. The same amount of electrons is then removed when the electrical energy is removed, thereby saving and loading the data in the memory.

MT29F4G16ABADAWP-AIT:D is typically used in various applications, including various consumer electronic applications such as digital cameras, camcorders, laptop computers, tablet PCs, gaming consoles, and web-enabled phones. The device is also widely used in the applications such as mobile phone, MP3 players, GPS systems, and automotive entertainment systems, due to its high-capacity storage and low power consumption.

The device\'s advanced features, such as small size, large capacity, fast data transfer, low power consumption, and reliability, provide customers with greater value and contribute to making the device attractive for use in consumer applications. Moreover, MT29F4G16ABADAWP-AIT:D is designed to meet the high-speed performance needs of memory intensive consumer applications, such as graphics applications and multimedia streaming, while maintaining the highest level of reliability.

With continuous advancements in modern technology, MT29F4G16ABADAWP-AIT:D is growing in popularity. It has shown excellent performance in providing high speed, low power consumption and reliable data storage. It has already become the go-to memory solution for many of the top-tier consumer electronics product manufacturers due to its robust technical features and reliability. Customers who are looking for a reliable, high-capacity and low-power memory device can use MT29F4G16ABADAWP-AIT:D with confidence.

The specific data is subject to PDF, and the above content is for reference

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