MT29F4G16ABAFAH4-AATES:F Allicdata Electronics
Allicdata Part #:

MT29F4G16ABAFAH4-AATES:F-ND

Manufacturer Part#:

MT29F4G16ABAFAH4-AATES:F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL FBGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel
DataSheet: MT29F4G16ABAFAH4-AATES:F datasheetMT29F4G16ABAFAH4-AATES:F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TC)
Description

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The MT29F4G16ABAFAH4-AATES:F memory from Micron Technology is a high-performance, low-power and low-cost 4GByte NAND Flash memory device. It’s an ideal choice for mobile phones, tablets and other embedded electronics applications. This article will discuss the application field and working principle of MT29F4G16ABAFAH4-AATES:F memory.

Application Field

The MT29F4G16ABAFAH4-AATES:F memory is suitable for a wide range of applications, such as mobile phones, tablets, digital cameras, digital audio players, personal digital assistants, handheld GPS devices, gaming systems and so on. It can provide users with both large storage space and fast access speed, which makes it an ideal choice for embedded electronics devices.

In addition, the MT29F4G16ABAFAH4-AATES:F memory can also provide a wide range of features, such as data integrity, low power consumption, error correcting capability, good security features and so on. All these features make the MT29F4G16ABAFAH4-AATES:F an ideal choice for the cost-sensitive applications.

Working Principle

The MT29F4G16ABAFAH4-AATES:F memory adopts a NAND-type Flash technology, which uses a series of Flash cells to store data. Each cell is divided into two parts: a floating gate and a control gate. The control gate is connected to a read/write voltage and a bit line. When a voltage is applied to the control gate, it will determine the state of the cell and determine whether the cell is read- or write-capable. The read/write voltage can be adjusted to control the read/write performance of the cell.

The cells are connected to word lines which are used to control the reading or writing of data from or to the cells. The control of the memory is done by a logic circuit which can select a certain set of cells across the device and access them. The data can be read or written to the selected cells by applying the appropriate signal on the control line.

The MT29F4G16ABAFAH4-AATES:F memory device has a Low-Power Interface (LPI) mode which optimizes the system power consumption while ensuring the device performance. This mode works by activating the logic circuitry only when the device is accessed. This significantly reduces the power consumption of the system when the device is idle.

Conclusion

The MT29F4G16ABAFAH4-AATES:F memory from Micron Technical is an ideal choice for applications such as mobile phones, tablets, digital cameras, digital audio players, personal digital assistants, handheld GPS devices, gaming systems and so on. The device is based on a NAND-type Flash technology with a series of cells and word lines for controlling the read/write operations. In addition, the device features a Low-Power Interface (LPI) mode which reduces the system power consumption when the device is idle, thus making the MT29F4G16ABAFAH4-AATES:F an ideal choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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