
Allicdata Part #: | MT29F4G16ABAFAH4-AITES:FTR-ND |
Manufacturer Part#: |
MT29F4G16ABAFAH4-AITES:F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4G PARALLEL FBGA |
More Detail: | FLASH - NAND Memory IC 4Gb (256M x 16) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (256M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory is a type of integrated circuit chip used to store data. MT29F4G16ABAFAH4-AITES:F TR is a type of memory chip that is used in a variety of applications. This article will explore the application field and working principles of the MT29F4G16ABAFAH4-AITES:F TR memory chip.
MT29F4G16ABAFAH4-AITES:F TR is a type of Flash memory. Flash memory is a non-volatile computer storage medium that can be electronically erased and reprogrammed. Flash memory is used mainly in computers, digital cameras, and other portable electronic devices.
The MT29F4G16ABAFAH4-AITES:F TR memory chip has a 4Gb density, meaning that it can store 4 gigabytes of data. This makes it ideal for applications such as digital cameras, where the user needs to be able to store large amounts of data. In addition, the chip offers a wide range of interfaces, such as Parallel, Serial, and SPI, making it suitable for a wide range of applications.
The MT29F4G16ABAFAH4-AITES:F TR memory chip also offers a number of features, such as fast write and erase times, High temperature operation, and low power consumption. These features allow the chip to operate in a wide range of environments and applications.
The working principle of the MT29F4G16ABAFAH4-AITES:F TR chip is relatively simple. The chip contains an array of floating gate transistors. When a voltage is applied to the gate of a transistor, electrons are drawn from the gate and travel to the drain side of the transistor. This process is known as Fowler–Nordheim tunneling, and is the basic principle behind Flash memory.
The electrons are trapped in a storage trapped by an oxide layer on the drain side of the transistor, which is what gives Flash memory its non-volatility. To read data from the chip, a reverse voltage is applied, which causes the electrons to tunnel from the drain back to the gate, carrying the stored data with them. The data is then decoded by a controller, and the data can then be read and written.
The MT29F4G16ABAFAH4-AITES:F TR memory chip is a versatile memory chip that can be used in a wide range of applications. It is suitable for applications such as digital cameras, medical equipment, and automotive applications. The chip offers fast write and erase times, high temperature tolerance, and low power consumption, making it an ideal solution for these applications. In addition, the simple working principles of Flash memory make it easy to use and understand.
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