
Allicdata Part #: | MT29F4G16ABBDAH4:D-ND |
Manufacturer Part#: |
MT29F4G16ABBDAH4:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (256M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
Base Part Number: | MT29F4G16 |
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The MT29F4G16ABBDAH4:D is a 4-Gigabit x16 NAND Flash Memory. It is a kind of non-volatile memory technology which is used frequently in devices like cell phones, media players, solid state drives, digital cameras, and many other electronic equipment.
This memory is manufactured by Micron and is part of their newest family of NAND Flash Memory products. It is constructed with 19nm process technology, making it one of the fastest NAND Flash memories on the market. It has a transfer rate of up to 200MT/s and is capable of data transfer speeds up to 6.4Gbps. It also features a page size of 4KB, a block size of 64KB, and an erase count of 1 million.
The MT29F4G16ABBDAH4:D can be best used in applications where data storage is of utmost importance. It is an excellent choice for mounting in small-form factor devices such as cell phones and portable media devices due to its small size and low power consumption. It is also suitable for industrial applications such as automotive, industrial, data logging and customer-facing digital signage systems.
The working principle of the MT29F4G16ABBDAH4:D involves storing data in a non-volatile manner on a set of flash cells that are organized into pages. Each page can contain up to four individual storage cells which are connected to a pair of contact points (which are used to read and write data). The pages are placed in series, and when the write command is given, the data is written to a designated page in the series.
When the page is full, another page must be opened and the data is written there instead. When a read command is given, the desired page is read and the contents are transferred to a buffer. After the transfer is complete, the controller signals the Flash memory to deactivate the page and the data is retrieved from the buffer. This process is similar to that of dynamic RAM, with the exception that the data does not need to be refreshed as often in the case of NAND Flash memory.
Overall, the MT29F4G16ABBDAH4:D is a great solution for reliable, low power non-volatile data storage. It offers fast transfer rates, small formfactor, and low power draw, making it an ideal choice for a wide range of consumer electronics and embedded devices. In addition, it is simple to install and use and is easily integrated into existing systems with minimal disruption.
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