
Allicdata Part #: | MT29F512G08CKCBBH7-6ITC:B-ND |
Manufacturer Part#: |
MT29F512G08CKCBBH7-6ITC:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512G PARALLEL 166MHZ |
More Detail: | FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 16... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Gb (64G x 8) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT29F512G08CKCBBH7-6ITC:B is a very versatile and powerful type of memory. It is widely used in applications ranging from storage to computing. It is a type of Flash memory, which is a type of non-volatile memory. This type of memory is ideal for applications that require data retention and fast access times. It is also very reliable, allowing for consistent performance in a variety of applications.
The MT29F512G08CKCBBH7-6ITC:B has a 512 megabit (Mb) capacity and is a 8-bit device. It is manufactured with a CMOS process, which is a type of semiconductor process. This process allows for low power consumption, making it an ideal memory for use in portable devices. The MT29F512G08CKCBBH7-6ITC:B also has very low write and read access times, which is why it is used in embedded systems and medical imaging devices.
The MT29F512G08CKCBBH7-6ITC:B is a NAND flash device and is capable of reading and writing up to 512 Mb of data. It is built with a four-way interleave architecture, which helps to improve its performance. The device also employs error correction code (ECC) to help prevent data corruption, even in the event of power failure. The device can also be programmed to self-correct errors, which can help to improve reliability.
The MT29F512G08CKCBBH7-6ITC:B has an access time of 25 nanoseconds (ns), which is incredibly fast. This allows for fast operation in systems requiring quick response times. It is also capable of performing faster than most other memories. This makes the device ideal for data storage, real-time data processing, and embedded systems.
The MT29F512G08CKCBBH7-6ITC:B can be used in a wide variety of applications and systems. Its small size and fast access time makes it an ideal choice for embedded systems and other applications where space and performance are important. It is also used in applications for medical imaging, such as Magnetic Resonance Imaging (MRI) and computed tomography (CT) scanners. In addition, it is used in mobile device and computer storage applications. The device also has the capacity and speed to be used in digital cameras, digital video recorders, and other devices.
The working principle of the MT29F512G08CKCBBH7-6ITC:B is fairly simple. The device stores data in a series of cells which each contain a cell block. Data is written to a specific cell block and is read by selecting the address of that cell block. The device can be programmed to recognize specific data values, allowing for quick and reliable operation. The device also includes error correction coding to help prevent data corruption, even in the event of a power loss.
In conclusion, the MT29F512G08CKCBBH7-6ITC:B is an advanced type of memory and is an ideal choice for applications that require fast access times and reliable data storage. Its small size and low power consumption makes it an ideal memory for a variety of applications and embedded systems. Its error correction coding helps to ensure reliable and consistent performance, even in the event of power failure. The device is widely used in medical imaging, mobile devices, computer storage, and digital cameras. This makes it a versatile and powerful memory for a variety of applications.
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