MT29F512G08CKECBH7-12:C Allicdata Electronics
Allicdata Part #:

MT29F512G08CKECBH7-12:C-ND

Manufacturer Part#:

MT29F512G08CKECBH7-12:C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512G PARALLEL 83MHZ
More Detail: FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 83...
DataSheet: MT29F512G08CKECBH7-12:C datasheetMT29F512G08CKECBH7-12:C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory is an important part of many electronic devices. Without it, any device would be unable to store the data it needs. MT29F512G08CKECBH7-12:C memory is one type of memory used in many applications today. In this article, we will look at the application fields and working principles of MT29F512G08CKECBH7-12:C memory.

MT29F512G08CKECBH7-12:C memory is a type of NAND flash memory used in many consumer applications. It is made up of 512 million memory cells, organized into 8KB blocks and arranged in a 54-level floating gate array. This memory is typically used in embedded systems, consumer electronics, medical devices, and automotive applications. It is also used in industrial devices, especially where large amounts of data must be read and written quickly.

One of the main advantages of MT29F512G08CKECBH7-12:C memory is its high read and write speed. This is due to the use of a NAND cell, which has an internal floating gate. This gate can be used to store two bits of data, which allows for faster read and write operations than other types of memory.

The working principle of MT29F512G08CKECBH7-12:C memory is based on the use of NAND cells. Each cell can store two bits of data, which can be accessed through a read and write operation. The data is stored in a floating gate array, which is organized in a 54-level structure. This structure is divided into a number of "pages", which can each hold 8KB of data.

When a read operation is performed, the data is read from the page and stored in an internal buffer. When a write operation is performed, the data is written to the page, and the page is updated accordingly. This process is repeated every time the memory is accessed, which ensures that the data stored in it is always up to date.

The MT29F512G08CKECBH7-12:C memory is an excellent choice for many applications that require large amounts of data to be read and written quickly. It offers high speed read and write operations and is reliable and power efficient. The robust structure of the NAND cell also ensures that the data stored in the memory is safe, even if the device is dropped or exposed to other environmental conditions.

In conclusion, the MT29F512G08CKECBH7-12:C memory is an ideal choice for many applications that need to read and write large amounts of data quickly and reliably. It is used in a wide range of consumer electronics, embedded systems, and industrial devices. Its fast read and write speed, reliable structure, and power efficiency make it a great choice for any application.

The specific data is subject to PDF, and the above content is for reference

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