MT29F512G08CUCABH3-10ITZ:A TR

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Memory

MT29F512G08CUCABH3-10ITZ is a 512 GB three-dimensional (3D) Multi-Level Cell (MLC) Non-Volatile Memory (NVM) device. The memory integrates 10 Layers of copper interconnects and is designed specifically for use in multi-functional mobile multimedia and server applications.

Application field

MT29F512G08CUCABH3-10ITZ provides the highest density and performance for NVM applications. It is ideal for data-intensive applications such as solid state drives (SSDs), digital video and audio recording, mobile video and audio devices, OLED displays, digital cameras, and other high-end embedded applications.

The sheer amount of storage and the performance specifications that MT29F512G08CUCABH3-10ITZ delivers make it a leader in non-volatile 3D memory solutions. In comparison to other storage solutions, MT29F512G08CUCABH3-10ITZ has the advantage of providing data storage capability with greater stability, durability and optimization. Furthermore, the improved layer-to-layer densities make it the ideal solution to power large-scale, data-intensive applications.

In addition to being used as a storage device, MT29F512G08CUCABH3-10ITZ can also be used as a cache in multi-functional servers. By making use of dedicated logic, the device can be used to speed up the processing of data-intensive operations, increase calculations for AI programs, improve streaming speeds for a variety of services and increase security.

Working Principle

MT29F512G08CUCABH3-10ITZ works by using the Dynamic Write Protection (DWP) architecture to protect data from any unintentional writes or transactions. This architecture applies per layer write protection technology, where each layer of the memory’s stack has its own allocated write protection tone. Through this approach, the data integrity and data safety of the device itself is enhanced, as any malfunctioning writes or transactions would be intercepted and kept away from the storage unit.

On the hardware side, MT29F512G08CUCABH3-10ITZ features 10 12-gigabit (Gb) layers with a programmable controller at the heart of the device. It has an NAND channel architecture which gives it the ability to improve overall performance, while also saving power and increasing battery life. Furthermore, it is designed to be compatible with any socket-equipped computer system.

On the software side, MT29F512G08CUCABH3-10ITZ opts for a high-level API, which makes it easier to manage, address, and access the memory device. Its onboard controller also enables advanced error correction and wear leveling functions, which leads to higher data reliability and improved user experience.

In a nutshell, MT29F512G08CUCABH3-10ITZ is an advanced 3D non-volatile memory device which is capable of providing enhanced data storage and performance capabilities. It is engineered for multi-functional mobile multimedia applications, as well as for high-end embedded applications. Its high layer-to-layer densities and its reliable protection features make it an ideal solution for data-intensive operations.

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