
Allicdata Part #: | MT29F512G08EEHAFJ4-3RES:ATR-ND |
Manufacturer Part#: |
MT29F512G08EEHAFJ4-3RES:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512G PARALLEL 333MHZ |
More Detail: | FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 33... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Gb (64G x 8) |
Clock Frequency: | 333MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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MT29F512G08EEHAFJ4-3RES:A TR is an advanced memory chip currently used in a variety of applications. It is a type of flash memory with a low power consumption, high storage capacity and high speed. It provides a great deal of flexibility and is able to store large amounts of data quickly and accurately.
This type of memory is most commonly used in storage applications. It is ideal for storing photos, videos, and other sensitive information as well as caching data used frequently across various applications. It can also be used in network applications, as its speed and capacity make it well suited for transferring large amounts of data quickly and reliably. Additionally, due to its low power consumption and high speed, it can be used for real-time applications where it can store data and make it available for rapid access.
The memory chip is able to store data in an array of cells, each containing a programmable memory cell. The memory cell can hold eight bits of data and is divided into four segments. Each segment can be programmed to store a bit of data, providing a total storage capacity of 32 bits per cell. This allows the memory chip to store up to 16GB of data in a single chip. The memory is organized in blocks, and individual blocks can have up to four segments, depending on the size of the data being stored.
The flexibility of the memory chip makes it suitable for a variety of applications. When used in embedded systems, the memory can be programmed to store specific information that is used by applications such as machine learning or decision making. It can also be used in data logging applications, where it can quickly and reliably store large amounts of data. Additionally, the low power consumption of the memory chip makes it well suited for low profile devices such as wearables or Internet of Things (IoT) devices.
The MT29F512G08EEHAFJ4-3RES:A TR memory chip is an advanced memory chip that offers high storage capacity, high speed, and low power consumption. It can be used in a variety of applications, ranging from embedded systems to data logging and IoT devices. Its flexibility makes it well suited for a wide range of applications, and its low power consumption makes it ideal for battery-powered devices.
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MT29F1G08ABAEAWP:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F2G08ABAEAH4-E:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F16G08ABABAWP-AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL TSO... |
MT29F2G01ABAGDSF-IT:G | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI SOICFLASH... |
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MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F1G16ABBEAH4-ITX:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29C4G96MAAHBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 4G PARAL 137... |
MT29F1T08CPCABH8-6:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 166M... |
MT29F256G08CJAAAWP-ITZ:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
MT29F16G08CBECBL72A3WC1P TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL WAF... |
MT29F4G16ABADAM60A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL WAFE... |
MT29F1T08CQCBBG2-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1T08CUCBBH8-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 384G PARALLEL 33... |
MT29F1T08EMHAFJ4-3RES:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29F256G08CECEBJ4-37ITRES:E TR | Micron Techn... | 0.0 $ | 1000 | MLC 256G 32GX8 VBGA IT DD... |
MT29F1G08ABAEAWP-IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F256G08AUCABH3-10IT:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F32G08AFACAWP-IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F1G08ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F16G08ABACAWP-Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F16G08ABACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F1T08CUCABK8-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29E2T08CUHBBM4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
MT29F256G08CMEDBJ5-12IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
MT29F2T08CVCCBG6-6C:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
MT29F128G08AKEDBJ5-12:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 13... |
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