MT29F512G08EKCBBJ5-6:B Allicdata Electronics
Allicdata Part #:

MT29F512G08EKCBBJ5-6:B-ND

Manufacturer Part#:

MT29F512G08EKCBBJ5-6:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: NAND FLASH
More Detail: Memory IC
DataSheet: MT29F512G08EKCBBJ5-6:B datasheetMT29F512G08EKCBBJ5-6:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Memory: MT29F512G08EKCBBJ5-6:B Application Field and Working PrincipleMemory is a fundamental component for modern computers, as it stores data for quick retrieval. MT29F512G08EKCBBJ5-6:B is a type of memory technology commonly used in a wide variety of applications from gaming consoles to business servers. This article aims to provide an overview of the application fields and working principles of MT29F512G08EKCBBJ5-6:B memory.MT29F512G08EKCBBJ5-6:B is a type of NAND Flash memory technology which utilizes thin-film memory cells built out of floating gate transistors which store each bit of information on the cells, allowing for greater density of memory compared to standard DRAM. It has a particularly high write endurance of up to 1000 cycles, higher than many other NAND Flash memories. This makes it suitable for applications requiring intensive read-write operations such as gaming consoles, embedded systems and networking applications.MT29F512G08EKCBBJ5-6:B memory provides 512GB of non-volatile memory and a maximum Read speed of 1280MB/sec, making it suitable for applications requiring large amounts of data to be stored and read in a short amount of time. It has a duplex bus master and ARM Cortex R4 processor user interface for greater convenience for the user. This memory also integrates a Data Interleave mode, allowing for easier access and advanced visualization of the stored data.The working principles of MT29F512G08EKCBBJ5-6:B are based on the principles of NAND Flash memory technology. It uses thin-film memory cells made up of floating-gate transistors to store data bits. When a high voltage is applied to the gate, electrons from the control gate move to the floating gate, causing the cell capacitance to increase. The increased capacitance stores a charge, representing the data bit. To read the data bit stored in the cell, the capacitor is discharged, allowing the control gate to detect the charge state. These memory cells can be accessed in a relatively short duration and can be rewritten digitally as needed.Apart from its application in gaming consoles, embedded systems and network applications, MT29F512G08EKCBBJ5-6:B is also used in other applications where speed and data storage are of essential importance. These applications include digital still cameras, portable digital audio players, external storage products and digital video cameras.MT29F512G08EKCBBJ5-6:B memory is also becoming increasingly popular in mobile markets. With its increased speed and decreased power consumption, it is ideal for a range of mobile applications such as smartphone gaming and navigation. In addition, the data protection mechanism provided by MT29F512G08EKCBBJ5-6:B memory makes it ideal for applications involving sensitive data, such as military and banking applications.In conclusion, MT29F512G08EKCBBJ5-6:B is a type of NAND Flash memory technology which has many advantages over other types of memory. It is suitable for a wide range of applications from gaming consoles to digital still cameras, embedded systems and mobile applications. Additionally, its increased speed, data protection and decreased power consumption make it ideal for applications requiring high performance and security.

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