
Allicdata Part #: | MT29F64G08AEAAAC5:ATR-ND |
Manufacturer Part#: |
MT29F64G08AEAAAC5:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G PARALLEL 52VLGA |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 52... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 52-VELGA |
Supplier Device Package: | 52-VLGA (18x14) |
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MT29F64G08AEAAAC5: A TR application field and working principle
MT29F64G08AEAAAC5 is a type of multi-level cell (MLC) NAND flash that is now widely used in mobile phones, tablets and other portable electronic devices as embedded non-volatile storage. It is based on Toshiba\'s 64-Gbit NAND memory technology and offers a quality solution to the data storage density problem. In addition, its high-speed interface allows it to support a wide range of applications.
The memory works on the principle of storing digital information in an array of cells. Each cell is composed of n-type material and p-type material. The two materials combine to form a transistor, which is then used to charge and discharge the cell, thus storing the data.
When the data needs to be retrieved from the cell, the charge of the cell is discharged, and the data from the cell is read. This process is known as a read operation. Likewise, the memory can be written to or erased when it is charged with a certain voltage. This is known as a write or erase operation.
One of the main advantages of MT29F64G08AEAAAC5 is its high reliability. It uses a multi-level cell, or MLC, architecture. This means that each cell can store up to four different digital values. This makes it is possible to store more data in a given area than other types of memory. In addition, it features a redundant array of independent chips (RAID) architecture, which provides improved reliability and increased data integrity.
Another important feature of MT29F64G08AEAAAC5 is its low power consumption. It uses a single-supply architecture, which helps reduce power consumption by up to 40% compared to previous generations. This makes it well suited for use in battery-operated or other portable devices where power efficiency is essential.
MT29F64G08AEAAAC5 is also known for its ability to support a range of applications. It offers support for eMMC and UFS interface, which allows it to be used for audio and video playback, memory cards, data streaming communication, automotive systems and other applications. It is also compatible with most popular operating systems and supports various programming languages.
In conclusion, the MT29F64G08AEAAAC5 is a high-quality, high-speed multi-level cell NAND flash memory solution that offers a reliable and power-efficient way to store data. Its versatile interface supports a wide range of applications, making it well suited for use in a variety of portable devices.
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