MT29F64G08AEEDBJ4-12:D

Memory

MT29F64G08AEEDBJ4-12:D is an 8-Gigabit Multi-Chip Package (MCP) based on the floating gate process. It is designed to provide high-density, high-speed flash memory for embedded applications. It is composed of two 4 Gigabit (Gb) components mounted together in an 8-lead STO package. The 8 Gb device supports eight independent 64Meg X 32 random access memories (RAMs).

Application Field

MT29F64G08AEEDBJ4-12:D is suitable for applications such as electronic data interchange (EDI) systems and embedded applications such as automotive control systems, medical diagnostic imaging systems, aerospace control systems, and robotics control systems.

This 8 Gb multi-chip package is also ideal for applications that require large amount of nonvolatile memory such as camera phones, digital cameras, and other multimedia applications. Its low power requirements and high data integrity make it suitable for use in portable devices.

Working Principle

MT29F64G08AEEDBJ4-12:D is a special type of memory called non-volatile memory. This means that the data stored in this memory will not be lost when the power supply is switched off. The working principle of this type of memory is based on the charging and discharging of tiny electrical charges stored inside its floating gate transistors.

The stored charges can be changed or erased by applying different voltages. This allows the stored data to be changed or erased without losing its electrical charge. This makes it suitable for use in embedded applications where data integrity and reliability are important.

The data stored in this type of non-volatile memory can be further protected by the advanced error correction code (ECC) feature, which is part of the device’s functionality. This ECC feature can detect and correct errors in the stored data.

In summary, MT29F64G08AEEDBJ4-12:D is an 8-Gigabit Multi-Chip Package suitable for high-density, high-speed flash memory for embedded applications. This type of memory offers data integrity, security, and reliability for embedded applications that require large amount of nonvolatile memory.