MT29F64G08CBCBBH1-10:B TR

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The MT29F64G08CBCBBH1-10:B TR is classified as a memory and is a type of flash memory product. It utilizes NAND technology and a floating gate cell, which allows it to store data without the need for power drainage. This means that information stored will not be lost when power is turned off or disrupted. The MT29F64G08CBCBBH1-10:B TR has a capacity of 64Gb in an industry-standard package, making it one of the highest capacity memory products available. It includes up to 1536 pages of 2K bytes each and provides some of the fastest read and write speeds available. The MT29F64G08CBCBBH1-10:B TR is also one of the most reliable flash memories on the market today with an endurance rating of 25,000 program/erase cycles, a high data retention of up to 100 years.The MT29F64G08CBCBBH1-10:B TR is primarily used in the industrial, automotive, telecommunications and consumer electronics markets. It has a variety of features and specifications, making it suitable for many applications including embedded systems, media storage, point of sale systems and mobile phones. Its highly-durable design ensures that it is suitable for use in applications where maximum durability and reliability are required.The MT29F64G08CBCBBH1-10:B TR works on a three-level cell (TLC) architecture. Each cell consists of a single floating gate transistor and a single memory cell transistor. Data is written and read through the memory cell transistor and the memory cell transistor changes its state depending on the voltage applied. This allows the MT29F64G08CBCBBH1-10:B TR to provide fast, repeatable program and erase operations. The MT29F64G08CBCBBH1-10:B TR also supports advanced error correction technology, which helps ensure data accuracy and reliability in situations where power instability is a concern.The MT29F64G08CBCBBH1-10:B TR also includes advanced security features, such as erase and write protection, as well as a unique command/address lock feature. This feature allows the device to be locked so that no external commands can be sent to the device without an authenticated command sequence. This helps protect confidential data from unwanted access and tampering.The MT29F64G08CBCBBH1-10:B TR is an ideal choice for applications that require high endurance, high reliability, and advanced security. It is a robust memory and is capable of providing fast read and write speeds, high data retention and excellent error correction capabilities. It is a cost-effective storage solution and is suitable for a wide range of applications.

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