
Allicdata Part #: | MT29F64G08CBEDBJ4-12:DTR-ND |
Manufacturer Part#: |
MT29F64G08CBEDBJ4-12:D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G PARALLEL 83MHZ |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 83MH... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Clock Frequency: | 83MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29F64G08CBEDBJ4-12:D, also known as Mobile LPDDR4, uses a 1z-nm process, is today\'s most advanced DRAM storage, and has many features and advantages that enable it to be used in a wide range of applications. In this article, we will discuss the application fields and working principles of MT29F64G08CBEDBJ4-12:D.
Application Fields
MT29F64G08CBEDBJ4-12:D, as the latest in Mobile LPDDR4 solutions, can be used in many different applications, including smartphones and other mobile devices, as well as in various industrial applications. Due to its ultra-low power consumption and high performance capabilities, MT29F64G08CBEDBJ4-12:D is an ideal choice for many different applications, such as:
- Smartphones
- Tablets
- Notebooks
- Edge computing devices
- Wearable devices
- Smart TVs and set-top boxes
- Industrial automation
MT29F64G08CBEDBJ4-12:D can be used in any of these applications, providing a high degree of reliability when it comes to memory storage.
Working Principles
MT29F64G08CBEDBJ4-12:D is based on technologies designed to improve the performance of DRAM memory chips. It utilizes advanced error correction algorithms, built-in burn and refresh functions, as well as a patented data-mapping and security tracking algorithm, to provide superior reliability and stability.
The MT29F64G08CBEDBJ4-12:D’s on-die error correction algorithms can quickly detect and fix any errors that may occur while data is being stored. Through the use of powerful data mapping and security tracking algorithms, MT29F64G08CBEDBJ4-12:D also offers protection against malicious attacks, allowing users to enjoy a more secure storage environment.
Furthermore, MT29F64G08CBEDBJ4-12:D’s advanced burn-in capabilities enable users to test the memory chip before usage, ensuring its long-term stability and reliability. Additionally, its built-in refresh technology, or LTEF (Low Temperature Extended Frequency) helps to extend the life of the device, improving its long-term performance and endurance.
Conclusion
The MT29F64G08CBEDBJ4-12:D is today’s most advanced DRAM chip, offering users a wide range of features and benefits that make it a great choice for a variety of different applications. With its powerful error correction, data-mapping and security tracking algorithms, advanced burn-in technology, and built-in refresh functions, MT29F64G08CBEDBJ4-12:D offers users an ultra-reliable and secure form of data storage. Therefore, it can be stated that MT29F64G08CBEDBJ4-12:D is the best choice for any applications that require a high degree of reliability and security.
The specific data is subject to PDF, and the above content is for reference
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