MT29F64G08CBEDBJ4-12M:D TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT29F64G08CBEDBJ4-12M:D TR is a chip manufactured by Micron Technology, Inc. It is a 64-gigabit non-volatile memory device, used in a range of applications such as memory storage, cellular phones, and embedded applications. This chip is one of the greatest advancements in the Memory technology, providing ultra-high speed and stability, with a low power rating.

The MT29F64G08CBEDBJ4-12M:D TR is an 8 layer device, featuring 8 individual die layers, 2 per layer. Each die layer has 2 banks of multiple die layers. In order to provide greater memory capacities and faster operating speeds, the individual die layers are stacked, providing a total of 64 gigabits of non-volatile memory capacity when fully populated.

By utilizing a 3D stack architecture, the MT29F64G08CBEDBJ4-12M:D TR can provide power efficiency, improved data access latency, and high speed operation.The chip also features a thermal control system, which ensures that the temperature of the stack remains at a constant level, preventing overheating and eventual destruction of stored data.

The working principle behind the MT29F64G08CBEDBJ4-12M:D TR is based on utilizing a single, continuously repeating pattern of memory cells. This repeating pattern is known as the linear Address Space (LAS) and is comprised of 4 banks, with each bank containing 4 planes.

The MT29F64G08CBEDBJ4-12M:D TR utilizes highly advanced address decoding technologies to ensure efficient memory access. These technologies enable the chip to decode both row and column addresses, allowing fast and one-way address fetching.

When compared to other non-volatile memory chips, the MT29F64G08CBEDBJ4-12M:D TR offers superior performance, with operatingData Transfer Rates up to 529 megabytes per second. This is achieved by utilizing the chip’s 8 layers of memory cells, each providing double the performance of a standard memory chip. Furthermore, the MT29F64G08CBEDBJ4-12M:D TR also features enhanced error correction code technologies, which allows for better reliability and data accuracy.

The MT29F64G08CBEDBJ4-12M:D TR is designed to meet the most demanding applications, from low power embedded systems to higher speed servers. With its ultra-high performance and low power capabilities, the chip is perfect for applications requiring high speed data processing, memory storage, and reliable operation.

The MT29F64G08CBEDBJ4-12M:D TR is an excellent choice for cost-effective non-volatile memory storage and processing. By leveraging its advanced technologies, the chip provides reliable storage and data access, while providing ultra-high performance and low power operation. With its 64 gigabit capacity and power efficiency, the MT29F64G08CBEDBJ4-12M:D TR is the perfect choice for embedded applications, memory storage, and high-speed data processing.

The specific data is subject to PDF, and the above content is for reference