MT29F64G08CBEDBL84C3WC1-M

Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	64Gb (8G x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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Introduction to MT29F64G08CBEDBL84C3WC1-M Memory MT29F64G08CBEDBL84C3WC1-M is a kind of non-volatile MLC NAND Flash memory, which combines high density with ultra-fast performance. It offers 64Gb of capacity in 20nm process technology and is ideal for consumer electronics applications such as mobile phones, digital cameras, and other digital multimedia devices which require high storage capacity and low power consumption.Applications of MT29F64G08CBEDBL84C3WC1-M MemoryThe MT29F64G08CBEDBL84C3WC1-M memory is designed for consumer electronic devices that require maximum storage capacity and low power consumption. It is ideal for multimedia devices such as digital cameras, camcorders, personal video players, and mobile phones, as well as portable storage devices, digital media players, smart cards, and other consumer products. The memory also supports wear-leveling, which helps protect data by spreading the write/erase cycle across the memory array.Working Principle of MT29F64G08CBEDBL84C3WC1-M MemoryThe MT29F64G08CBEDBL84C3WC1-M memory chip uses the MLC NAND Flash technology to achieve its high storage capacity and low power consumption. The memory consists of four 32Gb NAND cells, which are connected in a parallel configuration. The memory chip utilizes the same basic data organization process as SLC NAND: data is stored in blocks of 512 bytes, and the data is arranged inside each block in pages.The primary advantage of MLC NAND memory is that it is capable of storing two or more bits of data in each cell. This lets a manufacturer create higher storage densities without having to use more space or power. The MLC NAND memory also offers wear-leveling, which helps protect data by spreading the write/erase cycle across the memory array. This helps ensure that the memory cells are used evenly and do not suffer from excessive wear. In addition, the MT29F64G08CBEDBL84C3WC1-M memory supports Error Correction Code (ECC), which helps it to detect and correct errors in the data. This helps to improve the reliability and performance of the memory.ConclusionThe MT29F64G08CBEDBL84C3WC1-M memory is a high-density, low-power MLC NAND Flash memory designed for consumer electronics applications. It combines high density with ultra-fast performance, and is ideal for mobile phones, digital cameras, and other digital multimedia devices which require high storage capacity and low power consumption. The memory also supports wear-leveling and Error Correction Code (ECC) for improved reliability and performance.

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