
Allicdata Part #: | MT29F64G08CECDBJ4-10:DTR-ND |
Manufacturer Part#: |
MT29F64G08CECDBJ4-10:D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64G PARALLEL 100MHZ |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) Parallel 100M... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an essential part of modern day computing. It is used in order to store data and programs that have been created or used. The MT29F64G08CECDBJ4-10:D TR is one of the most reliable and versatile type of DRAM memory bet built using the latest technologies available in the memory technology industry. This memory is often chosen as the ideal choice for various applications that need reliable high performance.
The MT29F64G08CECDBJ4-10:D TR is mostly used in embedded applications and mobile device memory applications. It is composed of 64Gb of high-speed, high-performance of DDR3 SDRAM memory chip. The memory chip has the ability to perform at speeds of 1866 MT/s and its lesser versions can even reach up to 1333 MT/s. The chip is built with an array of 256Mb x 8 of DRAM cells with a total of 8 bank architecture thus giving it the improved memory performance.
The main application field of the MT29F64G08CECDBJ4-10:D TR is mostly in personal computers, gaming consoles, digital cameras and other embedded devices. It is often used in portable devices like personal digital assistants (PDAs) and other portable data devices. It is also used in server and storage applications. This memory can also be used in industrial automation and medical systems.
The working principle behind the MT29F64G08CECDBJ4-10:D TR is based on the standard SDRAM design. It consists of an array of MOS transistors and capacitors. The memory holds data by using the capacitance of the transistors and allows the device to store and retrieve information whenever needed. The entire Memory array is connected to an address line, a data line and a control line and is divided into several pages. The address line allows the memory controller to address a particular memory cell and the data line is used to transfer the data.
Each page of the memory contains the same type of cells and is composed of several rows and columns. When a page is activated, the controller will output the address which determines the row and column. This address is then used to access the memory cell where the data is stored and the data line is used to retrieve the data. The amount of data stored in each cell is determined by the size of the chip.
The MT29F64G08CECDBJ4-10:D TR is a reliable memory chip that can be used for many device types and applications. With its faster speed and high-performance feature, this memory chip is sure to be an excellent choice for those who need reliable and high-performance memory. With its reliable performance and flexibility, this memory chip is sure to be an ideal choice for many applications which require reliable and efficient memory.
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