
Allicdata Part #: | MT29F8G08ABABAWP-AITX:BTR-ND |
Manufacturer Part#: |
MT29F8G08ABABAWP-AITX:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8G PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 8Gb (1G x 8) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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MT29F8G08ABABAWP-AITX:B TR belongs to a particular type of computer memory, known as Flash memory. It is widely used in a variety of applications and comes in different variations based on its performance, capacity, interface and other criteria. This particular model was developed by Micron Technology and is optimized for use in portable and embedded systems.
The MT29F8G08ABABAWP-AITX:B TR consists of 8gbits of storage capacity and has features that include endurance of up to 20,000 program/erase cycles, a data retention of up to ten years, and an advanced wear-leveling algorithm. It also offers superior system performance and low power consumption. It is available in 8-pin SOIC and 8-ball BGA packages.
In terms of application field, the MT29F8G08ABABAWP-AITX:B TR can be used in a wide range of portable and embedded system, such as automotive, consumer, industrial and medical. These applications range from tablets and smartphones, to digital cameras and other multimedia products, to household and industrial appliances. It is also used in advanced applications such as GPS, wearables, and IoT devices.
The working principle of this memory type is based upon the time delay created by discharging a floating gate transistor as a way to store information. When electrons are introduced to a floating gate in the form of electric current, the gate remains charged for a certain amount of time before being discharged. This is used to write the particular storage bit state, which can then be read later. At the same time, electrons can be removed from the gate by applying an opposite current, allowing for data to be erased.
The MT29F8G08ABABAWP-AITX:B TR is a reliable source of non-volatile Flash memory that is easy to use and provides superior system performance, reliability, and data retention. With its versatile application field, this type of memory is ideal for both mobile and embedded devices, offering reliable data storage and retrieval.
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