MT29F8G16ABBCAH4:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	8Gb (512M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (9x11)
Base Part Number:	MT29F8G16

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Introduction to MT29F8G16ABBCAH4:C TR MemoryMT29F8G16ABBCAH4:C TR is a memory device specially designed for use in consumer electronic devices. This type of memory is used for storing data and programs that are used in consumer electronic products, such as computers, tablets, smartphones, and more.Features of MT29F8G16ABBCAH4:C TR MemoryMT29F8G16ABBCAH4:C TR memory offers a wide range of features that make it an ideal choice for use in consumer electronic products. It is designed with a fast data transfer rate, making it suitable for use with a wide range of applications that require fast data processing and manipulation.It also features a low power consumption enabling it to be used in battery-operated devices such as laptops and tablets, as well as in non-battery operated devices such as desktop computers.MT29F8G16ABBCAH4:C TR memory is also designed to be highly reliable and durable, making it an ideal choice for use in products that require long term storage of data and programs.Application Field Of MT29F8G16ABBCAH4:C TR Memory MT29F8G16ABBCAH4:C TR memory is used in a wide range of applications in the consumer electronics industry. It is used in computers, tablets, smartphones, gaming consoles, cameras and other devices that need to store data and programs on a permanent basis.It is also used in industrial and medical applications, such as patient data storage and analysis, industrial automation and process control, and transportation systems.Working Principle of MT29F8G16ABBCAH4:C TR MemoryMT29F8G16ABBCAH4:C TR memory works by using a multi-layer dielectric layer to store and retrieve data. This layer consists of two conducting layers, one of which is a substrate material and one of which is an anode material.The two layers are charged with an electric field and the data is then stored using a process called electron trapping. This process is based on the principle that when electrons are trapped in a dielectric layer, the stored data can be accessed by the user.When the data is retrieved, the electrons are released and the data is then transmitted to the requesting device. This process ensures the memory is highly reliable and accurate.ConclusionMT29F8G16ABBCAH4:C TR memory is a reliable and efficient memory device used in a wide range of applications in the consumer electronics industry. This type of memory is designed with a fast data transfer rate and low power consumption, making it suitable for use in a variety of applications.The working principle of MT29F8G16ABBCAH4:C TR memory is based on the principle of electron trapping, making it extremely reliable and accurate in the storing and retrieval of data.Overall, MT29F8G16ABBCAH4:C TR memory is an ideal choice for use in a variety of applications that require reliable and efficient storage and retrieval of data.

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