MT29F8G16ADADAH4:D

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

Memory is one of the most essential elements required for any industry or technology to function properly. Memory storage can be achieved in numerous ways, such as through integrated circuits (ICs), solid-state storage, optical storage, and more. One of the more popular and reliable memory storage components being used today is the MT29F8G16ADADAH4:D, a NAND Flash memory device.

Application Field

MT29F8G16ADADAH4:D is a 4-Gbit multi-level cell (MLC) NAND Flash memory device. It uses Floating Gate cell technology, MLC operation, and an advanced address/data bus architecture. The use of MLC technology increases memory capacity and provides for high data write/erase performance. These features make the device suitable for a variety of memory storage applications, including digital consumer electronics, telecommunications, networking and data storage.

The device is one of the latest models in NAND technology and is designed with the most advanced features and performance. It offers the highest read and write speeds available, making it ideal for use in consumer electronic devices such as digital cameras, mobile phones and PDAs. Its high transfer rate and MLC operation make it suitable for use in consumer applications that require fast data transfer rates and high storage capacities such as music and video playback.

The device is also an ideal choice for use in industrial applications, including testing, quality control, and medical imaging. Its 4-Gbit memory capacity makes it a reliable and long-term solution for data storage in these applications. The device also offers a high level of protection, with features such as ECC and BCH error correction circuits, and a reliable write cycle endurance up to 10,000 cycles.

Working Principle

The MT29F8G16ADADAH4:D utilizes a combination of hardware and software to maximize read/write performance and provide data integrity. The device stores data in high speed NAND memory cells, each containing several hundred transistors. When data is written to these cells, the voltage levels are adjusted to store up to four levels of information (MLC technology). These cells are connected to high speed address buses and data lines, providing fast access to data both for read and write operations.

NAND Flash memory devices are also equipped with error correction features such as ECC (error correction code) and BCH (Bose Chaudhuri-Hocquenghem) algorithms. These algorithms allow data to be read with the highest accuracy and reliability, even in hostile environments. In addition to error correction algorithms, the device also has a reliable write endurance of up to 10,000 cycles, thus ensuring long term data integrity.

Conclusion

The MT29F8G16ADADAH4:D is one of the most reliable and advanced NAND Flash memory devices on the market today. Its wide range of applications and features make it an ideal choice for use in consumer electronics, industrial, and medical applications. Its high capacity, fast data transfer rates and reliable error correction algorithms give users confidence in the reliability of their data.

The specific data is subject to PDF, and the above content is for reference