MT29RZ2B2DZZHHTB-18W.88F TR Allicdata Electronics
Allicdata Part #:

MT29RZ2B2DZZHHTB-18W.88FTR-ND

Manufacturer Part#:

MT29RZ2B2DZZHHTB-18W.88F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 2G PARALLEL 533MHZ
More Detail: FLASH - NAND, DRAM - LPDDR2 Memory IC 2Gb (256M x ...
DataSheet: MT29RZ2B2DZZHHTB-18W.88F TR datasheetMT29RZ2B2DZZHHTB-18W.88F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.8V
Operating Temperature: -25°C ~ 85°C (TA)
Description

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The MT29RZ2B2DZZHHTB-18W.88F TR is a member of the memory category of electronic components. Its application and working principles are closely related to this field.

Memory components are integrated circuits which are used to store data and instructions for later use. This is in contrast to components such as logic gates, which are used to process digital information (data and instructions). The MT29RZ2B2DZZHHTB-18W.88F TR is an example of a memory component. The most common type of memory component is the DRAM (Dynamic Random Access Memory), used in computers, servers, and a wide range of other devices.

The MT29RZ2B2DZZHHTB-18W.88F TR is a type of DRAM which uses a contiguous array of series-switched capacitors and transistors to store and access data. This design is more reliable and less expensive than the conventional DRAM design, which uses capacitors and transistors placed in a checkerboard pattern. The MT29RZ2B2DZZHHTB-18W.88F TR is available in 256 Mb, 512 Mb and 1 Gb sizes.

The MT29RZ2B2DZZHHTB-18W.88F TR\'s application field is primarily in embedded applications such as automotive, industrial, medical, and military. In these applications, memory requirements are often such that traditional DRAM technology is not suitable. The MT29RZ2B2DZZHHTB-18W.88F TR provides the desirable combination of speed, power efficiency and low cost which is often required.

In operation, the MT29RZ2B2DZZHHTB-18W.88F TR uses a combination of capacitors and transistors to store data. It is essentially made up of a matrix of rows and columns. When a data bit is to be stored, it is written to the capacitor of the corresponding column and row. The capacitor charges or discharges in order to store the data. This process is very fast, and can store thousands of bits per second.

When data is to be retrieved from the MT29RZ2B2DZZHHTB-18W.88F TR, the address of the data is provided by the control circuitry, and then the data is read from the capacitor. The data is then sent to the control circuitry, which passes it on to the processor or other peripherals. This process can also be very fast, and can read thousands of bits per second.

The MT29RZ2B2DZZHHTB-18W.88F TR is also capable of performing error checking and correcting (ECC) on the data. This is done by comparing the actual data stored with a calculated value which is generated from the data. If an error is detected, the controller can then use the calculated value to repair the error. This process greatly increases the reliability of the data stored on the MT29RZ2B2DZZHHTB-18W.88F TR.

In conclusion, the MT29RZ2B2DZZHHTB-18W.88F TR is a type of memory component designed primarily for use in embedded applications. It uses a series-switched capacitor and transistor array to store and access data, and can perform ECC to increase reliability. It is available in three sizes, and is fast, power efficient and cost effective.

The specific data is subject to PDF, and the above content is for reference

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