
Allicdata Part #: | MT29RZ4B2DZZHHWD-18I.84F-ND |
Manufacturer Part#: |
MT29RZ4B2DZZHHWD-18I.84F |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH RAM 4G PARALLEL 533MHZ |
More Detail: | FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (128M x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH - NAND, DRAM - LPDDR2 |
Memory Size: | 4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.8V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In the world of computer applications, MT29RZ4B2DZZHHWD-18I.84F (hereafter referred to as MT29RZ4B2D) is a memory device that functions as a nonvolatile, read-only memory (ROM). The device is designed to store data in a highly efficient manner and is primarily used in embedded systems like mobile phones, automotive electronics and digital cameras. The MT29RZ4B2D is also used in many other devices such as video game consoles and digital television receivers.
MT29RZ4B2D utilizes various advanced technologies to achieve its unique design and to serve as a reliable and efficient storage solution. By utilizing these technologies it is able to store more data than standard memory devices and also works in a variety of environments. The main motivation behind the device\'s design is its superior energy efficiency, allowing it to be used in low-power applications with limited space. The design also uses an array of sophisticated technologies including an integrated circuit process, advanced active matrix addressing and an extended architecture to optimize performance and reliability.
The MT29RZ4B2D consists of an array of memory cells which are grouped into wide, active rows and columns and features a power-efficient architecture that enables the device to be operated in low-power scenarios and still have excellent performance. The device\'s design also offers superior protection against power fluctuations and transient errors. Data is stored in the memory cells in a serialized form, allowing the device to access information quickly with minimal overhead. The device is also highly reliable, with no single point of failure and a built-in wear-leveling function to prevent data loss.
MT29RZ4B2D is a versatile memory device that offers a variety of features for different types of applications. It can be used for general-purpose storage applications and is particularly well suited for embedded systems due to its size, power efficiency and robust architecture. The device also features an array of interfaces, allowing users to easily control and access the data stored in the device. It is extremely reliable and can be used in a variety of environments, from consumer electronics to industrial applications.
In summary, the MT29RZ4B2D is a highly advanced memory device that utilizes an array of innovative technologies to provide an efficient, robust, and reliable storage solution. Its design focuses on energy efficiency and can be used in a variety of applications. With its versatile feature set and compact size, the device is an ideal storage solution for embedded systems.
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