MT29RZ4B4DZZMGWD-18I.80C TR Allicdata Electronics
Allicdata Part #:

MT29RZ4B4DZZMGWD-18I.80CTR-ND

Manufacturer Part#:

MT29RZ4B4DZZMGWD-18I.80C TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 4G PARALLEL 533MHZ
More Detail: FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (128M x ...
DataSheet: MT29RZ4B4DZZMGWD-18I.80C TR datasheetMT29RZ4B4DZZMGWD-18I.80C TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.8V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is an essential component of modern digital technologies. Memory devices provide the data necessary to power computers, tablets, smartphones, and other digital devices. MT29RZ4B4DZZMGWD-18I.80C TR is a type of memory which has a wide range of applications due to its innovative design. This article will explore the application fields and working principles of MT29RZ4B4DZZMGWD-18I.80C TR.

First, let\'s focus on the application field of MT29RZ4B4DZZMGWD-18I.80C TR. This type of memory has a variety of uses, such as in cellular phones, tablets, embedded systems, automotive systems, and even game consoles. Its large capacity, high speed, and low power consumption make it an ideal choice for these applications. For example, in automotive systems, it can be used for in-vehicle infotainment systems or for collision avoidance and other applications. In embedded systems, its small size and low power consumption make it the perfect solution for constrained environments. Additionally, its low voltage support makes it suitable for battery-powered applications too.

Next, let\'s discuss the working principle of MT29RZ4B4DZZMGWD-18I.80C TR. This type of memory is based on Flash memory technology, which uses floating-gate transistors to store data. The Flash memory is divided into blocks, each containing a number of cells. Each cell is then composed of two transistors: a control gate, which determines whether a bit is stored in the data capacity storage, and a floating gate, which stores the data itself. A negative voltage is applied to theFlash cell, causing the electrons to move to the floating gate, thus storing the data.

When the data needs to be read, a positive voltage is applied to the Flash cell, causing the electrons to move from the floating gate. This causes a change in the electric field of the cell, which can be read to determine the bit stored in the memory cell. Additionally, data can be written to the memory cell, by raising the voltage above the write threshold voltage level. This causes the electrons to be pushed from the control gate to the floating gate, thus storing the new bit.

MT29RZ4B4DZZMGWD-18I.80C TR is a type of Flash memory, which has a wide range of applications and uses Flash memory technology for storing data. Its large capacity, high speed, low power consumption, and small size make it an ideal choice for a variety of applications, from automotive systems to embedded systems. Additionally, the versatile Flash technology used in this memory enables the fast and reliable storage and reading of data, making it the perfect choice for any modern digital device.

The specific data is subject to PDF, and the above content is for reference

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