
Allicdata Part #: | MT29RZ4C8DZZMHAN-18W.80YTR-ND |
Manufacturer Part#: |
MT29RZ4C8DZZMHAN-18W.80Y TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH RAM 4G PARALLEL 533MHZ |
More Detail: | FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (256M x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH - NAND, DRAM - LPDDR2 |
Memory Size: | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.8V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT29RZ4C8DZZMHAN-18W.80Y is a type of memory that is used for applications requiring increased storage and retrieval capabilities. This type of memory is commonly used in mobile and consumer electronics, medical technologies, and financial services. The memory is designed to store and retrieve data in a safe and reliable manner, ensuring that information is never lost, damaged, or corrupted.
Memory technology (MT) is composed of various components that work together to provide a reliable and efficient data storage and retrieval system. Mt29rz4c8dzzmhan-18w.80y provides an advanced controller that manages the data traffic between the device and the memory chip. This controller provides error detection and correction features to ensure the integrity of information stored in the memory. Additionally, the controller is used to optimize memory access times, increasing the speed with which data can be stored and retrieved.
The memory chip consists of three separate components, the DRAM, NAND, and NOR circuits. DRAM (Dynamic Random Access Memory) is used for temporary data storage and is volatile, meaning that the data is lost when the power is removed. NAND (Not-AND) and NOR (Not-OR) circuits are used for high-speed read and write operations. NAND circuits are used for storage of data, while NOR circuits can be used for faster read and write performance.
In addition to storing data, the MT29rz4c8dzzmhan-18w.80y memory offers features that increase the security and reliability of the stored data. One such feature is the Advanced Error Correction Code, which uses sophisticated algorithms to detect and correct errors in the data stored on the chip. This helps improve the accuracy of stored data and reduces the risk of data corruption due to physical or electrical errors. The memory also offers data protection features that ensure that data is not lost or corrupted due to structural failures or failures of other components on the system.
The MT29rz4c8dzzmhan-18w.80y memory is used in numerous applications due to its ability to provide reliable, efficient, and secure storage and retrieval of data. This type of memory is commonly used in mobile and consumer electronics, such as cell phones and tablets, as well as medical technology and financial services. This type of memory is also used in data centers where high-capacity storage and retrieval are necessary. Its advanced features and wide range of applications make it an ideal choice for any type of data storage and retrieval system.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT29F1G08ABBDAH4:D | Micron Techn... | -- | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F64G08CFACBWP-12:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F256G08CMCABH2-10Z:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F512G08CUCDBJ6-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
MT29E1T08CMHBBJ4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29E768G08EEHBBJ4-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 768G PARALLEL 33... |
MT29F1T208ECCBBJ4-37:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
MT29TZZZ4D4BKERL-125 W.94M TR | Micron Techn... | 0.0 $ | 1000 | MCP 4GX8/128MX32 PLASTIC ... |
MT29F1T08CPCBBH8-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1G08ABAEAWP:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F2G08ABAEAH4-E:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F16G08ABABAWP-AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL TSO... |
MT29F2G01ABAGDSF-IT:G | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI SOICFLASH... |
MT29TZZZ8D5JKEZB-107 W.95Q | Micron Techn... | 0.0 $ | 1000 | MLC EMMC/LPDDR3 72GMemory... |
MT29F1G08ABBEAM68M3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 1G DIE 128MX8Memory I... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F1G16ABBEAH4-ITX:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29C4G96MAAHBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 4G PARAL 137... |
MT29F1T08CPCABH8-6:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 166M... |
MT29F256G08CJAAAWP-ITZ:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
MT29F16G08CBECBL72A3WC1P TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL WAF... |
MT29F4G16ABADAM60A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL WAFE... |
MT29F1T08CQCBBG2-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1T08CUCBBH8-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 384G PARALLEL 33... |
MT29F1T08EMHAFJ4-3RES:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29F256G08CECEBJ4-37ITRES:E TR | Micron Techn... | 0.0 $ | 1000 | MLC 256G 32GX8 VBGA IT DD... |
MT29F1G08ABAEAWP-IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F256G08AUCABH3-10IT:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F32G08AFACAWP-IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F1G08ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F16G08ABACAWP-Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F16G08ABACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F1T08CUCABK8-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29E2T08CUHBBM4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
MT29F256G08CMEDBJ5-12IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
MT29F2T08CVCCBG6-6C:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
MT29F128G08AKEDBJ5-12:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 13... |
MT29F32G08ABCDBJ4-6ITR:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 166... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
