MT29RZ4C8DZZMHAN-18W.80Y TR Allicdata Electronics
Allicdata Part #:

MT29RZ4C8DZZMHAN-18W.80YTR-ND

Manufacturer Part#:

MT29RZ4C8DZZMHAN-18W.80Y TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 4G PARALLEL 533MHZ
More Detail: FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (256M x ...
DataSheet: MT29RZ4C8DZZMHAN-18W.80Y TR datasheetMT29RZ4C8DZZMHAN-18W.80Y TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.8V
Operating Temperature: -25°C ~ 85°C (TA)
Description

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MT29RZ4C8DZZMHAN-18W.80Y is a type of memory that is used for applications requiring increased storage and retrieval capabilities. This type of memory is commonly used in mobile and consumer electronics, medical technologies, and financial services. The memory is designed to store and retrieve data in a safe and reliable manner, ensuring that information is never lost, damaged, or corrupted.

Memory technology (MT) is composed of various components that work together to provide a reliable and efficient data storage and retrieval system. Mt29rz4c8dzzmhan-18w.80y provides an advanced controller that manages the data traffic between the device and the memory chip. This controller provides error detection and correction features to ensure the integrity of information stored in the memory. Additionally, the controller is used to optimize memory access times, increasing the speed with which data can be stored and retrieved.

The memory chip consists of three separate components, the DRAM, NAND, and NOR circuits. DRAM (Dynamic Random Access Memory) is used for temporary data storage and is volatile, meaning that the data is lost when the power is removed. NAND (Not-AND) and NOR (Not-OR) circuits are used for high-speed read and write operations. NAND circuits are used for storage of data, while NOR circuits can be used for faster read and write performance.

In addition to storing data, the MT29rz4c8dzzmhan-18w.80y memory offers features that increase the security and reliability of the stored data. One such feature is the Advanced Error Correction Code, which uses sophisticated algorithms to detect and correct errors in the data stored on the chip. This helps improve the accuracy of stored data and reduces the risk of data corruption due to physical or electrical errors. The memory also offers data protection features that ensure that data is not lost or corrupted due to structural failures or failures of other components on the system.

The MT29rz4c8dzzmhan-18w.80y memory is used in numerous applications due to its ability to provide reliable, efficient, and secure storage and retrieval of data. This type of memory is commonly used in mobile and consumer electronics, such as cell phones and tablets, as well as medical technology and financial services. This type of memory is also used in data centers where high-capacity storage and retrieval are necessary. Its advanced features and wide range of applications make it an ideal choice for any type of data storage and retrieval system.

The specific data is subject to PDF, and the above content is for reference

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