MT29TZZZ7D7DKLAH-107 W ES.9B7 TR

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Memory

MT29TZZZ7D7DKLAH-107 W ES.9B7 TR is a 3D NAND memory technology that employs the 30-nanometer-process. Its development was led by technology giant Toshiba, making it the second generation of triple-level cell (TLC) NAND flash memory.

Due to the intricacy of this memory technology, it has a number of uses above and beyond the standard storage of data. By virtue of its advanced, low-latency storage solutions this type of memory is particularly useful for mobile devices requiring a high degree of data storage capacity without being interrupted by lengthy delays. It finds particular use in consumer electronics, mobile computing, automotive, medical and consumer audio-video applications.

Working Principle

The specific process of data storage within this type of memory is known as ‘floating gate cell architecture’. It works by layering up connected string of transistors in order to charge and store electrical energy. This then gets released when it is ready to be utilised elsewhere in the device. Many TLC flash memory devices use two levels of charge to store 3 bits per memory cell in order to increase the compactness of the device and ensure a higher level of data storage reliability.

The two levels of charge are referred to as ‘on’ and ‘off’ which accurately indicate whether the memory cell holds a charge or not. As any type of memory contains a series of memory cells, the total number of cell layers equals the total storage capacity of the device. In the case of MT29TZZZ7D7DKLAH-107 W ES.9B7 memory technology, this is 144 GB.

In order to construct the floating gate transistors, a complex process known as ‘program verify cycle or ‘PVK’ is employed. This consists of several steps including writing and reading the electrical charges from the memory cells in order to determine the level of storage and whether or not an error has occurred. By employing their own type of PVK, manufacturers are able to create unique memory products that are more reliable and efficient than any previous models.

The characteristics of this memory technology make it ideal for high volume consumer electronics, particularly those that rely on substantial data storage levels. Its low energy consumption and 30-nanometer-process mean that it is highly energy efficient and produces good levels of data integrity.

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