| Allicdata Part #: | MT29VZZZAC8FQKSL-053W.G8F-ND |
| Manufacturer Part#: |
MT29VZZZAC8FQKSL-053 W.G8F |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | ALL IN ONE MCP 3264G |
| More Detail: | Memory IC |
| DataSheet: |  MT29VZZZAC8FQKSL-053 W.G8F Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | * |
| Part Status: | Obsolete |
Description
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Abstract This article will introduce the application field and working principle of the MT29VZZZAC8FQKSL-053 W.G8F, which belongs to the category of memory.
Introduction
The MT29VZZZAC8FQKSL-053 W.G8F is a typical memory product, and is widely used in digital products such as intelligent terminals, embedded systems and certain communication equipment. It has the advantages of low power consumption, large storage capacity and good read and write speed.Features
The MT29VZZZAC8FQKSL-053 W.G8F is a 2D TLC NAND flash memory device with a density of 8 Gb, organized as 1 die × 32 planes × 1024 blocks × 1024 pages. The maximum potential capacity of the product is 4GB. It provides a 72-Pin ZIF (zero insertion force) socket, a quad SPI interface and an asynchronous interface with a data transfer rate of up to 200Mbps.Application Field
MT29VZZZAC8FQKSL-053 W.G8F memory can be usually used in digital products with low performance requirements and small storage capacity, not only applicable to general digital products but also many industrial control and special equipment. Its typical application scenarios will be including: intelligent terminals, low-end digital products, embedded systems, small devices for data storage, etc. Moreover, because of its low power consumption feature, it is also generally used in some digital products with higher requirements for power saving, such as digital photo frame, RF card, smart watches, etc.Working Principle
The MT29VZZZAC8FQKSL-053 W.G8F memory adopts the 2D TLC NAND flash architecture, which can provide high speed, low power consumption and good storage performance. The memory is organized as 1 die × 32planes × 1024 blocks × 1024pages. The total capacity is 8 Gb. To ensure data read/write integrity, it has four layers of error correction coding (ECC).Each page of the memory device can be accessed serially or via the quad SPI interface, and the ASIC controller drives the data transfer between the host and the memory device.To enable fast page read/write operations, the product has an intelligent internal optimization algorithm, which orders memory operations for optimized performance.In addition, the memory adopts an advanced wear-levelling algorithm which ensures the number of program-erase cycles of blocks in whole chip is the same, thereby improving the reliability of the write operation.Conclusion
In summary, the MT29VZZZAC8FQKSL-053 W.G8F offers a good balance of speed, storage capacity and power efficiency. It is suitable for design usage in various digital products such as intelligent terminals, embedded systems and certain communication equipment. And due to its advanced optimization algorithm, it can provide excellent read/write speeds and high storage performance.The specific data is subject to PDF, and the above content is for reference
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