Allicdata Part #: | MT29VZZZBD8DQOPR-053W.9G8TR-ND |
Manufacturer Part#: |
MT29VZZZBD8DQOPR-053 W.9G8 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | ALL IN ONE MCP 5600G |
More Detail: | Memory IC |
DataSheet: | MT29VZZZBD8DQOPR-053 W.9G8 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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MT29VZZZBD8DQOPR-053 W.9G8 TR Application Field and Working Principle
MT29VZZZBD8DQOPR-053 W.9G8 TR is a new generation of 3D NAND memory chip developed by the US company Micron Technology. This chip has a 2D structure, which is designed to be more compatible with the large amount of data stored in today\'s devices. It is used in a variety of digital devices for data storage, including smartphones, tablets, smart TVs, notebook computers, and many other devices. with the increasing demand for capacity, the storage capacity of devices is also growing rapidly.
What is the Memory Chip?
The 3D NAND memory chip is a type of non-volatile memory that utilizes a 3D structure to increase storage density. This type of chip is typically more durable and reliable than its 2D counterpart and also allows for smaller physical sizes and better energy efficiency. The memory chip also allows for faster data transfer speeds than traditional 2D memory chips, making it more suitable for applications in which data must be transferred quickly.
Application Fields
The MT29VZZZBD8DQOPR-053 W.9G8 TR memory chip is suitable for a wide range of applications. In smartphones, the chip is used for storing large amounts of data such as photos, applications, music, and videos. In tablets, the chip is used for storing application data and media files. In laptops and desktop computers, the chip is utilized for data storage and transfer from internal storage to external storage. The chip is also used as a flash memory module for other digital devices where data transfer speed is critical.
Working Principle
The working principle of MT29VZZZBD8DQOPR-053 W.9G8 TR memory chip is relatively simple. The chip utilizes a 3D structure made up of multiple layers of cells stacked on top of each other. Each layer contains millions of MOSFET transistors, and these transistors can be programmed to store data in either an ‘on’ or an ‘off’ state. The chip is read by connecting the layers of transistors one layer at a time and checking their state. The data can then be written to the chip by connecting the transistor layers and programming them to the desired state.
Advantages
The MT29VZZZBD8DQOPR-053 W.9G8 TR memory chip offers several advantages over traditional 2D NAND memory chips. Firstly, the 3D structure of the chip allows for higher storage densities, allowing devices to store more data without needing larger physical sizes. Additionally, the chip is more energy-efficient than traditional 2D memory chips, allowing for longer battery life in devices. Finally, the chip provides faster data transfer speeds than its 2D counterpart, allowing for much quicker data transfers and faster application access.
Conclusion
The MT29VZZZBD8DQOPR-053 W.9G8 TR memory chip is a new generation of 3D NAND memory chip developed by Micron Technology. This chip is suitable for a variety of mobile and desktop applications due to its high storage capacity, energy efficiency, and fast data transfer speeds. It is also durable and reliable, making it ideal for a variety of digital devices. It is a great choice for data storage and applications that require a high level of performance.
The specific data is subject to PDF, and the above content is for reference
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MT29F1G08ABBFAH4-ITE:F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F2G01ABAGDSF-IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI 16SOPFLAS... |
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MT29F2G08AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G08ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G08ABCWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16ABCHC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F4G16ABCHC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
MT29F8G08AAAWP:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
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