Allicdata Part #: | MT29VZZZBD8HQOWL-053WES.G8DTR-ND |
Manufacturer Part#: |
MT29VZZZBD8HQOWL-053 W ES.G8D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | ALL IN ONE MCP 560G |
More Detail: | Memory IC |
DataSheet: | MT29VZZZBD8HQOWL-053 W ES.G8D TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT29VZZZBD8HQOWL-053 W ES.G8D TR is a memory device used in various applications. It is an advanced memory technology that combines the power and efficiency of a NAND flash memory with the performance of a NOR flash memory. This combination gives the MT29VZZZBD8HQOWL-053 W ES.G8D TR an advantage over other memory solutions available on the market.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR is a highly reliable non-volatile memory module that is used for a wide range of applications. It can be used for various storage and computing applications, such as industrial automation, automotive, gaming, mobile, and consumer electronics. It is also used in other areas, such as aerospace and military. Additionally, it can be used in medical and scientific applications, such as monitoring systems and data logging.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR is a reliable, low power, low latency device that offers a high performance memory experience. It is a high density memory device that is highly reliable, secure and has a high capacity. It also has a fast random read and write performance, as well as an excellent read-modify-write performance. The device also offers a wide range of features and benefits, making it ideal for a variety of applications.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR works using NAND flash technology. It uses a two-dimensional array of transistors (called the NAND cell) to store and read data. The array of transistors is organized in blocks and pages, which allows it to read and write data sequentially. The device has two input/output pins, which allow it to communicate with a host system. When the cells are in a certain state, it can store, write or read data.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR is designed to be compatible with other NAND flash solutions, making it easy to integrate with existing systems. It offers a low power consumption and is compatible with a wide range of operating systems, from Windows and Linux, to mobile operating systems such as Android and iOS.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR also offers a wide range of features and benefits. It is a highly reliable, low power and low latency device that offers a high performance memory experience. It has an impressive endurance, as it can be written and read over 100,000 times before failure. It is also highly secure, as data stored on the device is protected by advanced encryption standards such as AES-256 and XTS-AES.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR has a wide range of application fields. It is suitable for industrial automation, automotive, gaming, mobile, and consumer electronics. It can be used in medical and scientific applications, as well as in aerospace and military. Additionally, it can be used in embedded and enterprise applications, such as data storage and analytics applications. It also has a wide range of features that make it suitable for a variety of applications.
The MT29VZZZBD8HQOWL-053 W ES.G8D TR is a reliable, low power and high performance memory device. It is a highly reliable, secure and durable device that offers an impressive performance. It is suitable for a wide range of applications, from industrial automation and automotive to mobile and consumer electronics. Additionally, it has a wide range of features and benefits, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G08AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G08ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
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MT29F2G16AADWP:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16AADWP-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F4G08AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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MT29F4G16AACWC:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
MT29F4G16AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
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