MT52L256M32D1PF-093 WT:B TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT52L256M32D1PF-093 WT:B TR is a memory product. This memory device is part of the Synchronous DRAM series. it is a 2M x 32 bits x 4 banks SDRAM which is ideal for data buffers, cache and other high-speed data handling applications. It has an operating speed of up to 133MHz and a maximum cost efficiency with the lowest working voltage and power consumption. The device comes in an FBGA (Fine Balled Grid Array) package and is suitable for a wide range of applications.

The MT52L256M32D1PF-093 WT:B TR is used in various application fields. It is mainly used in consumer electronics, automotive, industrial and networking products where high performance and low power requirements are present. It is also used in mobile computing and communication, embedded systems and mobile network products. The device is also increasingly being used in digital signage, broad-band access and server applications.

The working principle of the MT52L256M32D1PF-093 WT:B TR is based on the synchronous dynamic random-access memory (SDRAM) architecture. The device uses an advanced data bank architecture and an optimized data clock synchronization mode that provides more efficient data switching. It also supports write management, allowing up to four banks open, reducing access time. Additionally, the device includes on-chip error correction codes (ECC) that can help detect and correct single-bit errors, ensuring data reliability.

The device supports an array of features for efficient system performance and user convenience. These features include auto-refresh, automatic self-refresh, low power shutdown mode and power save mode. The device also supports four DDR (Double Data Rate) clock phases and can be operated in appropriate power-up/power-down sequences. Other features include on-die termination (ODT) and ECC (error detection and correction).

The MT52L256M32D1PF-093 WT:B TR is an efficient memory device that meets the needs of applications requiring high-speed data transfer, low power consumption and a small form factor. This device offers superior performance, scalability, reliability and cost efficiency, making it an ideal choice for memory applications.

The specific data is subject to PDF, and the above content is for reference