MT52L256M64D2PD-107 WT ES:B TR Allicdata Electronics
Allicdata Part #:

MT52L256M64D2PD-107WTES:BTR-ND

Manufacturer Part#:

MT52L256M64D2PD-107 WT ES:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 16G 933MHZ FBGA
More Detail: SDRAM - Mobile LPDDR3 Memory IC 16Gb (256M x 64) ...
DataSheet: MT52L256M64D2PD-107 WT ES:B TR datasheetMT52L256M64D2PD-107 WT ES:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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The MT52L256M64D2PD-107 WT ES:B TR is a memory device specially designed for use in industrial applications. It is a next-generation product that offers high performance, increased reliability and compatibility with a wide range of applications. This memory device is used in many types of industrial computer systems and is available in a variety of storage capacities.

The MT52L256M64D2PD-107 WT ES:B TR is a wide-temperature memory. It is designed to operate over an extended temperature range from -40°C to +85°C without any performance degradation. This makes it ideal for applications where reliability and operation at higher temperatures are essential. The MT52L256M64D2PD-107 WT ES:B TR is also a low-power memory, with low operating currents and low standby current. This gives it a much longer battery life than some other memory devices.

The MT52L256M64D2PD-107 WT ES:B TR memory device includes a Multi-Bank Architecture. This allows for the simultaneous access of two different banks of memory, allowing for faster data access and increased efficiency. The use of Multi-Bank Architecture also helps to reduce the amount of power required to operate the memory device, which helps to reduce the overall system power consumption.

The MT52L256M64D2PD-107 WT ES:B TR also features advanced error checking and correction (ECC) technology. This allows for improved reliability and data integrity, as well as the detection and correction of data errors. The ECC technology ensures that the data stored in the memory is accurate, meaning that it can be retrieved correctly and quickly when needed.

The MT52L256M64D2PD-107 WT ES:B TR also offers an on-board power, temperature and voltage monitoring feature. This feature helps to monitor the health of the memory device, allowing for early detection and correction of any potential problems. This is especially important for applications where the memory must remain active and operational for long periods of time.

The MT52L256M64D2PD-107 WT ES:B TR is an extremely versatile memory device. It is designed for use in a wide range of industrial applications, including industrial controllers, robotics, medical and automotive devices. Its high reliability and extended operating temperature range make it suitable for use in applications that require a long operating life and high performance.

Overall, the MT52L256M64D2PD-107 WT ES:B TR is an excellent memory device that offers high performance, good reliability and compatibility with a wide range of applications. It is also an environmentally friendly memory device, with low power consumption and increased efficiency. As such, it is ideal for use in industrial and automotive applications that require a combination of reliability and speed.

The specific data is subject to PDF, and the above content is for reference

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